Fabrication of ultraviolet photodetector with aluminum nitride nanowire networks via direct transfer method

Ali, Yassir Abdullahi; Teker, Kasif

doi:10.1016/j.mee.2019.03.016

Cited by 12 publications

(8 citation statements)

References 12 publications

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“…Nanomaterials with a large surface-to-volume ratio and higher sensitivity have attracted attention in the photosensitive device application field. In recent years, UV photodetectors based on AlN nanostructures, especially nanowires, have been paid much attention, including photoconductors [49][50][51], MSM photodetectors [52,53], and Schottky photodiodes [54].…”

Section: Aln Nanostructuresmentioning

confidence: 99%

Deep Ultraviolet Photodetector: Materials and Devices

Fang

et al. 2023

Crystals

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The application of deep ultraviolet detection (DUV) in military and civil fields has increasingly attracted the attention of researchers’ attention. Compared with the disadvantages of organic materials, such as complex molecular structure and poor stability, inorganic materials are widely used in the field of DUV detection because of their good stability, controllable growth, and other characteristics. Rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional detectors. Herein, the development history and types of DUV detectors are briefly introduced. Typical UWBG detection materials and their preparation methods, as well as their research and application status in the field of DUV detection, are emphatically summarized and reviewed, including III-nitride semiconductors, gallium oxide, diamond, etc. Finally, problems pertaining to DUV detection materials, such as the growth of materials, the performance of devices, and their future development, are also discussed.

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Section: Aln Nanostructuresmentioning

confidence: 99%

Deep Ultraviolet Photodetector: Materials and Devices

Fang

et al. 2023

Crystals

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“…2 UV detection has been successfully implemented in various scientific and technological fields, including environmental monitoring, security, early fire detection, biomedical imaging, air purification, etc. [3][4][5][6][7][8] In parallel, there has been constant ongoing progress towards new fabrication techniques and ventures aimed at addressing the niche area of UV PD technology, for example, success in new nanofabrication techniques, developing smart, flexible, intelligent, self-powered devices and so on. For the betterment of the roadmap of device integration, until now, various methodologies have been developed for the design of semiconductor nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Self-powered ZnO-based pyro-phototronic photodetectors: impact of heterointerfaces and parametric studies

et al. 2022

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“…Wide bandgap semiconductors (WBG) such as GaN [17], SiC [18], ZnO [19], Ga 2 O 3 [20], and AlN [21] are good candidate materials to construct UV selective photodetectors due to their excellent mechanical, chemical, and thermal stability. Among these WBGs, 4H-SiC is a very good candidate for constructing UV photodetectors that can not only function in extreme environmental conditions like high temperature and high radiation, but also have large gain and high signal-to-noise ratio.…”

Section: Introductionmentioning

confidence: 99%

Self-powered silicon carbide ultraviolet photodetector via gold nanoparticle plasmons for sustainable optoelectronic applications

Yildirim¹,

Teker²

2022

Phys. Scr.

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In recent years, it is becoming inevitable to design/construct eco-friendly sustainable electronic and photonic devices to minimize the footprints of these as part of the fight against global problems like resource depletion and pollution. To this end, scientists have been researching to produce sustainable, self-powered electronic and photonic devices capable of meeting the standards of consumers along with minimal adverse effects on the environment. In this study, we fabricated and analyzed a high-performance self-powered silicon carbide ultraviolet photodetector (SiC-UVPD) through functionalizing with gold nanoparticles (Au NPs). The effect of Au NPs on the improvement of the photodetector was systematically investigated. The self-powered SiC-UVPD exhibited a very good responsitivity of 0.30 A/W and a detectivity of 7 x 1011 cm.Hz1/2.W-1 under 254 nm wavelength UV light irradiation without any external power. The photodetector also provided quick responses to incident UV light with 28 ms rise time and 88 ms fall time. To sum up, the performance of the fabricated self-powered SiC-UVPD shows that SiC-UVPDs can offer new solutions for high performance emerging sustainable energy and eco-friendly optoelectronic devices.

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Fabrication of ultraviolet photodetector with aluminum nitride nanowire networks via direct transfer method

Cited by 12 publications

References 12 publications

Deep Ultraviolet Photodetector: Materials and Devices

Deep Ultraviolet Photodetector: Materials and Devices

Self-powered ZnO-based pyro-phototronic photodetectors: impact of heterointerfaces and parametric studies

Self-powered silicon carbide ultraviolet photodetector via gold nanoparticle plasmons for sustainable optoelectronic applications

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