Fabrication of ultra-shallow junction by in situ doped amorphous silicon films and its application in silicon drift detectors

Jiang, Shuai; Jia, Rui; Tao, Ke; Wang, Longjie; Luo, Wei; Wang, Bolong; Song, Hongjia; Li, Xing

doi:10.1088/1361-6463/ac27d3

Cited by 2 publications

(1 citation statement)

References 29 publications

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“…Finally, the Al electrodes were deposited on the corresponding N+ and P+ regions of SDD by electron beam evaporation and metal lift-off process in acetone was performed to form the patterned metal contacts. Some detailed fabrication processes can be seen in these publications [17][18][19][20]. We fabricated the two square-SDD devices SDD-1 and SDD-2 by APCVD technology and their structures are shown in Figure 1a,b.…”

Section: Methodsmentioning

confidence: 99%

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

et al. 2022

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The Silicon Drift Detector (SDD) with square structure is often used in pixel-type SDD arrays to reduce the dead region considerably and to improve the detector performance significantly. Usually, the anode is located in the center of the active region of the SDD with square structure (square-SDD), but the different anode positions in the square-SDD active area are also allowed. In order to explore the effect on device performance when the anode is located at different positions in the square-SDD active region, we designed two different types of square-SDD in this work, where the anode is located either in the center (SDD-1) or at the edge (SDD-2) of its active region. The simulation results of current density and potential distribution show that SDD-1 and SDD-2 have both formed a good electron drift path to make the anode collect electrons. The experimental results of device performance at the temperature range from −60 °C to 60 °C show that the anode current of the two fabricated SDDs both decreased with the decrease of temperature, but their voltage divider characteristics exhibited high stability resistance value and low temperature coefficient, thereby indicating that they could both provide corresponding continuous and uniform electric field at different temperatures. Finally, SDD-1 and SDD-2 have energy resolutions of 248 and 257 eV corresponding to the 5.9 keV photon peak of the Fe-55 radioactive source, respectively. Our experimental results demonstrate that there is no significant impact on the device performance irrespective of the anode positions in the square-SDD devices.

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Section: Methodsmentioning

confidence: 99%

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

et al. 2022

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Prospects of silicide contacts for silicon quantum electronic devices

Tsoukalas,

Schupp,

Sommer

et al. 2024

Applied Physics Letters

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Metal contacts in semiconductor quantum electronic devices can offer advantages over doped contacts, primarily due to their reduced fabrication complexity and lower temperature requirements during processing. Some metals can also facilitate ambipolar device operation or form superconducting contacts. Furthermore, a sharp metal–semiconductor interface allows for contact placement in close proximity to the active device area avoiding damage caused by dopant implantation. However, in the case of gate-defined quantum dots in intrinsic silicon, the formation of a Schottky barrier at the silicon–metal interface can lead to large, nonlinear contact resistances at cryogenic temperatures. We investigate this issue by examining hole transport through metal oxide-semiconductor transistors with platinum silicide contacts on intrinsic silicon substrates. We extract the contact and channel resistances as a function of temperature and improve the cryogenic conductance of the device by more than an order of magnitude by implementing meander-shaped contacts. In addition, we observe signatures of enhanced transport through localized defect states, which we attribute to platinum clusters in the depletion region of the Schottky contacts that form during the silicidation process. These results showcase the prospects of silicide contacts in the context of cryogenic quantum devices and address associated challenges.

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Fabrication of ultra-shallow junction by in situ doped amorphous silicon films and its application in silicon drift detectors

Cited by 2 publications

References 29 publications

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

Prospects of silicide contacts for silicon quantum electronic devices

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