Fabrication of the nanoimprint mold using inorganic electron beam resist with post exposure bake

Abstract

Articles you may be interested inLarge-diameter roll mold fabrication method using a small-diameter quartz roll mold and UV nanoimprint lithography J. Vac. Sci. Technol. B 29, 06FC08 (2011); 10.1116/1.3657524Fabrication of a seamless roll mold using inorganic electron beam resist with postexposure bake J. Vac. Sci. Technol. B 29, 06FC06 (2011); 10.1116/1.3656052Fabrication of nanodot array molds by using an inorganic electron-beam resist and a postexposure bake Time-dependent exposure dose of hydrogen silsesquioxane when used as a negative electron-beam resist Fabrication of identical sub-100 nm closely spaced parallel lines using electron beam lithography Nanoimprint lithography ͑NIL͒ is the preferred technique for next-generation nanometer-scale patterning because of its cost effectiveness and simplicity when compared to conventional technology. The replicated pattern depends on the mold pattern, hence efficient methods for fabricating the fine mold are critically required and have recently become intensive subjects of research. This study reports a new method for the fabrication of a fine mold: this method uses low-acceleration-voltage ͑4 kV͒ electron beam lithography with spin on glass ͑SOG͒, which is used as a positive-tone inorganic resist. Although our SOG process does not contain chemically amplified material, postexposure bake ͑PEB͒ was characteristically used in the authors' process. The PEB process caused the annealing effect for the SOG and also suppressed the proximity effect. Consequently, a line-and-space pattern nanoimprint mold with a sub-50 nm spacing was fabricated at 4 kV using their process, and ultraviolet NIL was successfully carried out using the fabricated mold.

Optimized ultraviolet grayscale process for high vertical resolution applied to spectral imagers

“…They showed that this enhanced thermal treatment breaks down a significant portion of the photoactive materials, which allows to decrease the relationship between the development rate and the exposure dose. Mortelmans et al 19 and Unno et al 20 investigated the influence of a PEB on the dose-response behavior of PMMA and NIMO-P0701 resist, respectively, using electron beam lithography. They obtained a decrease in the depth of development if a PEB is carried out at high temperatures and for a longer time for a given dose.…”

Fabrication of a seamless roll mold using inorganic electron beam resist with postexposure bake

“…As a result, the contrast curve for SOG material was improved. 13 Moreover, the surface of the obtained pattern was smooth. Therefore, the pull-up speed is very important in the formation of the resist layer on a roll substrate using the dipping method.…”

“…12 In this study, we employed a high-resolution inorganic EB resist and the pattern shrink effect via postexposure bake (PEB). 13 Using this technique, the contrast of spin-on-glass (SOG) material was drastically improved and could be controlled by the PEB temperature. Moreover, because PEB is a thermal process, it is not limited by machine accuracy, such as during vibration of the a) Research Fellow of the Japan Society for the Promotion of Science.…”

Fabrication of eight-step diffractive optical element for hologram-ROM

“…By using the master CGH pattern mold, an inverted mold was duplicated by UV-NIL onto a polyester film substrate (Cosmoshine A4300; Toyobo Co., Osaka). In this case, we used PAK-01-CL (Toyo Gosei Co., Tokyo) as the UV-curable resin, and the fabricated mold was processed directly by UV-NIL, thus eliminating the etching processes [13]. Finally, the CGH pattern was transferred onto a silicon wafer by NIL with the inverted mold.…”