2015
DOI: 10.1016/j.catcom.2015.02.006
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Fabrication of Ta2O5 films on tantalum substrate for efficient photocatalysis

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Cited by 39 publications
(15 citation statements)
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“…The binding energy of Nb 5+ in NNO or NTO is lower than that of Nb 5+ in pure Nb 2 O 5 (207.7, 210.4 eV) . Ta 4f 7/2 and 4f 5/2 peaks of NTO or NTO F appear at 25.7 or 26.3 eV and 27.6 or 29.0 eV, respectively, indicating the existence of Ta species in the form of Ta 5+ in agreement with literature data . The doublet with line splitting of 1.9 eV is notable for the 4f 5/2 and 4f 7/2 components in Ta 2 O 5 .…”
Section: Resultssupporting
confidence: 88%
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“…The binding energy of Nb 5+ in NNO or NTO is lower than that of Nb 5+ in pure Nb 2 O 5 (207.7, 210.4 eV) . Ta 4f 7/2 and 4f 5/2 peaks of NTO or NTO F appear at 25.7 or 26.3 eV and 27.6 or 29.0 eV, respectively, indicating the existence of Ta species in the form of Ta 5+ in agreement with literature data . The doublet with line splitting of 1.9 eV is notable for the 4f 5/2 and 4f 7/2 components in Ta 2 O 5 .…”
Section: Resultssupporting
confidence: 88%
“…The peaks of Nb 3d centered at 207.0 and 209.7 eV can be assigned to 3d 5/2 and 3d 3/2 states, respectively, which are identical to the binding energies for Nb 3d (Nb 5+ ) in Nb 2 O 5 . The Ta 4f 7/2 and Ta 4f 5/2 peaks appear at 25.7 and 27.6 eV, respectively, indicating the existence of Ta 5+ species which is in agreement with the literature . The relative atomic concentrations (at.…”
Section: Resultssupporting
confidence: 88%
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“…Although pristine Ta 2 O 5 can only be excited by UV irradiation with a wavelength below 318 nm, its advantage is the high photoactivity attributed to its band structure, i.e., relatively higher conduction band position than that of TiO 2 , which can result in the generation of electrons with a higher potential [3]. Hence, Ta 2 O 5 looks like a good candidate for the photocatalytic decomposition of pollutants in the gas and aqueous phases [4] or for hydrogen evolution [4,5]. Moreover, Ta 2 O 5 could be applied as corrosion-resistant material [6], thin-film catalyst [7], anti-reflective coating [8,9], an element of ultra-large-scale integrated circuits [10], or semiconductor precursor [11].…”
Section: Introductionmentioning
confidence: 99%