2019
DOI: 10.1002/solr.201900218
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Fabrication of Sulfur‐Incorporated Bismuth‐Based Perovskite Solar Cells via a Vapor‐Assisted Solution Process

Abstract: Methylammonium (MA) bismuth iodide ((CH3NH3)3Bi2I9) is a promising perovskite material for solar cell application considering the air stability and the nontoxic lead‐free molecular constitution. However, the further improvement of the device performances is prohibited by the wide bandgap (≈2.1 eV) and unsatisfied crystallinity of the (CH3NH3)3Bi2I9 films. Herein, a developed low‐pressure vapor‐assisted solution process (LP‐VASP) method is applied to obtain the sulfur‐incorporated bismuth‐based perovskites film… Show more

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Cited by 34 publications
(41 citation statements)
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“…Finally, they achieved the largest PCE in inverted planar structure of 1.15% (Figure d,e). Recently, MA 3 Bi 2 I 9−2 x S x film was fabricated by the low‐pressure vapor‐assisted solution process method . In detail, bismuth ethyl xanthate, Bi(xt) 3 , film was deposited first, then it reacted with MAI vapor under low pressure (10 kPa) at 150 °C.…”
Section: Ternary Bismuth Halidesmentioning
confidence: 99%
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“…Finally, they achieved the largest PCE in inverted planar structure of 1.15% (Figure d,e). Recently, MA 3 Bi 2 I 9−2 x S x film was fabricated by the low‐pressure vapor‐assisted solution process method . In detail, bismuth ethyl xanthate, Bi(xt) 3 , film was deposited first, then it reacted with MAI vapor under low pressure (10 kPa) at 150 °C.…”
Section: Ternary Bismuth Halidesmentioning
confidence: 99%
“…Recently, MA 3 Bi 2 I 9−2x S x film was fabricated by the low-pressure vaporassisted solution process method. [113] In detail, bismuth ethyl xanthate, Bi(xt) 3 , film was deposited first, then it reacted with MAI vapor under low pressure (10 kPa) at 150 °C. The resulting MA 3 Bi 2 I 9−2x S x film has a lower bandgap of 1.67 eV after S-incorporation, and the corresponding device has a PCE of 0.15%, as Figure 7f-h shows.…”
Section: Optoelectronic Devicesmentioning
confidence: 99%
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“…Bismuth-based perovskite materials seem to be a promising alternative for lead-free perovskites due to their suitable optoelectronic properties, high defect tolerance, less toxicity and good stability towards humidity, light and heat [ 2 , 24 , 25 ]. The effective ionic radius of bismuth is equivalent to that of lead ions .…”
Section: Introductionmentioning
confidence: 99%
“…The weight loss of 64.99% was observed in the temperature range 120-150 C, indicating the decomposition of Sb(xt) 3 . [18] When the temperature reached 250 C, a smaller exothermic and a negligible weight loss of about 5% were observed, which may be caused by sulfur loss during Sb 2 S 3 crystallization. [19] Based on the result of TGA, the spin-coated films were pre-annealed at 140 C to evaporate the solvent and thermally decomposed, followed by the annealing at different temperatures to form crystalline Sb 2 S 3 .…”
mentioning
confidence: 93%