2017
DOI: 10.1038/s41598-017-12684-x
|View full text |Cite
|
Sign up to set email alerts
|

Fabrication of Subnanometer-Precision Nanopores in Hexagonal Boron Nitride

Abstract: We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (h-BN) with atomically precise control of the pore shape and size. Previous methods of pore production in other 2D materials typically create pores with irregular geometry and imprecise diameters. In contrast, other studies have shown that with careful control of electron irradiation, defects in h-BN grow with pristine zig-zag edges at quantized triangular sizes, but they have failed to demonstrate production and control of isola… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

2
75
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 71 publications
(79 citation statements)
references
References 55 publications
2
75
0
Order By: Relevance
“…Solid-state nanopores are generally fabricated in a freestanding membrane of a solid-state material such as silicon nitride (SiNx) 75 , graphene 19 , hexagonal boron nitride (h-BN) 76 , or molybdenum disulfide (MoS2) 41 , with thicknesses ranging from ~0.3-30 nm. In common nanopore chips (Fig.3g), such a membrane is structurally supported by a ~200-500 µm thick substrate material, typically silicon 75 (Si), glass 16 (SiO2), or Pyrex 77 .…”
Section: Noise In Solid-state Nanoporesmentioning
confidence: 99%
“…Solid-state nanopores are generally fabricated in a freestanding membrane of a solid-state material such as silicon nitride (SiNx) 75 , graphene 19 , hexagonal boron nitride (h-BN) 76 , or molybdenum disulfide (MoS2) 41 , with thicknesses ranging from ~0.3-30 nm. In common nanopore chips (Fig.3g), such a membrane is structurally supported by a ~200-500 µm thick substrate material, typically silicon 75 (Si), glass 16 (SiO2), or Pyrex 77 .…”
Section: Noise In Solid-state Nanoporesmentioning
confidence: 99%
“…51,52 Due to this technological importance, several experimental and theoretical studies have been carried out for h-BN with defects. 36,[52][53][54][55][56][57][58][59][60][61][62][63][64][65][66][67][68] Different kinds of defects in h-BN can be classified as vacancy (mono-vacancies to cluster of vacancies), antisite, and impurities. In particular, defects like monovacancies of boron and nitrogen atoms in h-BN are among the most commonly observed defects.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, Zettili and coworkers have shown the possibility of engineering a cluster of vacancies and characterising them using ultra-high-resolution transmission electron microscopy. 56,61,63 Signatures of defects in h-BN are identified by analysing cathodoluminescence and photoluminescence spectra. 51,64 It is shown that the emission band around 4 eV originates from the transitions involving deep defect levels.…”
Section: Introductionmentioning
confidence: 99%
“…Thus far, we have only considered directional anisotropy arising from a non-axisymmetric distribution of the relatively long-range first-order electrostatics along the pore edge. Non-circular pores in hexagonal boron nitride [13,14] or triangular [15,16] and diamond-shaped [11] pores in monolayer MoS2 are marked by strong higher-order electrostatics and present another potentially interesting case. For example, let us consider the directional response of the diamond-shaped pores in MoS2 [11].…”
Section: Resultsmentioning
confidence: 99%