Fabrication of submicrometer structures by PSE/MBE

Bacchin, G.; Nishinaga, Tatau

doi:10.1016/s0022-0248(99)00824-6

Cited by 11 publications

(8 citation statements)

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“…We demonstrated selective area epitaxy of GaAs using a patterned graphene mask on Ge (001), over a length scale of 10 microns. The selectivity is comparable to previous demonstrations of selective area epitaxy by MBE using SiO 2 masks, where smaller spacings of a 100 nm to 2 microns are more typical [9,20,21]. The main limiting feature in the current work is the rough surface morphology of GaAs on Ge (001), which we attribute to graphene-induced faceting of the Ge (001) surface.…”

Section: Discussionsupporting

confidence: 82%

Selective area epitaxy of GaAs films using patterned graphene on Ge

Lim,

Manzo,

Strohbeen

et al. 2021

Preprint

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We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for graphene spacings as large as 10 microns. The selectivity is highly dependent on the growth temperature and annealing time, which we explain in terms of temperature dependent sticking coefficients and surface diffusion. The high nucleation selectivity over several microns sets constraints on experimental realizations of remote epitaxy.

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