Fabrication of Sub-Lithography-Limited Structures via Nanomasking Technique for Plasmonic Enhancement Applications

Bauman, Stephen J.; Novak, Eric; Debu, Desalegn T.; Natelson, Douglas; Herzog, Joseph B.

doi:10.1109/tnano.2015.2457235

Cited by 19 publications

(16 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During simulations, the nanoslit width, g, was fixed at 5 nm, and the incident wavelength, λ, was fixed at 875 nm, which is near the bandgap of the GaAs substrate [33,34]. Fabricating structures with a sub-10-nm gap are possible using a self-aligned [35] or nanomasking technique [36].…”

Section: Introductionmentioning

confidence: 99%

Effect of incidence and sidewall taper angles on plasmonic metal–semiconductor–metal photodetector enhancements

et al. 2019

Self Cite

View full text Add to dashboard Cite

We investigate an interdigitated nanograting structure on a GaAs substrate for plasmonic metal-semiconductormetal photodetector applications. This computational work has studied the effects that the taper angle of the nanograting sidewall and the light wave angle of incidence have on the optical and current enhancements in the device. The study, involving two types of taper angle structures-positive and negative-showed that both taper angle directions can generate more optical and electrical enhancements than perfectly vertical wall structures for light incident at both the Brewster angle and the normal incident angle. The enhanced electric field value at the optimum positive taper angle is ∼22% and ∼120% greater than the negative taper angle and vertical wall structure, respectively. In addition, the total weighted optical enhancement value for the optimal positive taper angle structure is ∼65% and ∼120% greater than the optimal negative taper angle and vertical wall structure, respectively. This work demonstrates that the increased enhancements are due to the nanoscale focusing of light and impedance matching. The incident wave angle along with the taper angle can significantly promote these enhancements, especially at the Brewster angle.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of incidence and sidewall taper angles on plasmonic metal–semiconductor–metal photodetector enhancements

et al. 2019

Self Cite

View full text Add to dashboard Cite

show abstract

“…43,44 Prior work has investigated plasmonic effects in microscale interdigital electrodes, 45,46 but the current work extends the research to the nanoscale where plasmonic effects are more significant. Additionally, due to a recently demonstrated fabrication technique that can create sub-10 nm gaps, 47 these new geometries, which have not before been studied, are now carefully explored. Various structural parameters are modified to determine the conditions for maximum optical enhancement occurring in the GaAs substrate layer of the model, emphasizing the additional generation of optical enhancement in the device.…”

Section: Introductionmentioning

confidence: 99%

“…49 In the nanomasking process utilized by the Herzog group, a Ti adhesion layer is most commonly used because a sacrificial Cr layer is required for the fabrication process. 47 Thus, the current work studies the effects of varying the thickness of a Ti adhesion layer on the local plasmonic field enhancement.…”

Section: Introductionmentioning

confidence: 99%

Modeling and optimization of Au-GaAs plasmonic nanoslit array structures for enhanced near-infrared photodetector applications

et al. 2017

Self Cite

View full text Add to dashboard Cite

, "Modeling and optimization of Au-GaAs plasmonic nanoslit array structures for enhanced near-infrared photodetector applications," J. Nanophoton. 11(1), 016017 (2017), doi: 10.1117/1.JNP.11.016017. Abstract. This theoretical work explores how various geometries of Au plasmonic nanoslit array structures improve the total optical enhancement in GaAs photodetectors. Computational models studied these characteristics. Varying the electrode spacing, width, and thickness drastically affected the enhancement in the GaAs. Peaks in enhancement decayed as Au widths and thicknesses increased. These peaks are resonant with the incident near-infrared wavelength. The enhancement values were found to increase with decreasing electrode spacing. Additionally, a calculation was conducted for a model containing Ti between the Au and the GaAs to simulate the necessary adhesion layer. It was found that optical enhancement in the GaAs decreases for increasing Ti layer thickness. Optimal dimensions for the Au electrode include a width of 240 nm, thickness of 60 nm, electrode spacing of 5 nm, and a minimum Ti thickness. Optimal design has been shown to improve enhancement to values that are up to 25 times larger than for nonoptimized geometries and up to 300 times over structures with large electrode spacing. It was also found that the width of the metal in the array plays a more significant role in affecting the field enhancement than does the period of the array. © The Authors. Published by SPIE under aCreative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

show abstract

“…As we have outlined previously, preliminary results have demonstrated the ability to simultaneously fabricate sub-10-nm slits with a density of over 500 million per square cm. 52 Nanomasking has also been used to simultaneously create gaps in two dimensions, which is not possible with some serial techniques. An additional benefit of nanomasking is that it has been shown to be capable of simultaneously fabricating both sub-10-nm slits and adjacent sub-20-nm metallic structures.…”

mentioning

confidence: 99%

“…An additional benefit of nanomasking is that it has been shown to be capable of simultaneously fabricating both sub-10-nm slits and adjacent sub-20-nm metallic structures. 52 The nanomasking technique overcomes this limitation via a unique multistep lithography process to simultaneously produce many sub-10-nm gaps across a surface. The geometrical control of this technique has been demonstrated as well, in which gaps can be created adjacent to sublithography-limited structures with control over their shapes and sizes.…”

mentioning

confidence: 99%

Fabrication and analysis of metallic nanoslit structures: advancements in the nanomasking method

Bauman

Darweesh

Debu

et al. 2018

J. Micro/Nanolith. MEMS MOEMS

Self Cite

View full text Add to dashboard Cite

, "Fabrication and analysis of metallic nanoslit structures: advancements in the nanomasking method," J. Micro/Nanolith. MEMS MOEMS 17(1), 013501 (2018), doi: 10.1117/1.JMM.17.1.013501. Abstract. This work advances the fabrication capabilities of a two-step lithography technique known as nanomasking for patterning metallic nanoslit (nanogap) structures with sub-10-nm resolution, below the limit of the lithography tools used during the process. Control over structure and slit geometry is a key component of the reported method, exhibiting the control of lithographic methods while adding the potential for mass-production scale patterning speed during the secondary step of the process. The unique process allows for fabrication of interesting geometric combinations such as dual-width gratings that are otherwise difficult to create with the nanoscale resolution required for applications, such as nanoscale optics (plasmonics) and electronics. The method is advanced by introducing a bimetallic fabrication design concept and by demonstrating blanket nanomasking. Here, the need for the secondary lithography step is eliminated improving the mass-production capabilities of the technique. Analysis of the gap width and edge roughness is reported, with the average slit width measured at 7.4 AE 2.2 nm. It was found that while no long-range correlation exists between the roughness of either gap edge, and there are ranges in the order of tens of nanometers over which the slit edge roughness is correlated or anticorrelated across the gap. This work helps quantify the nanomasking process, which aids in future fabrications and leads toward the development of more accurate computational models for the optical and electrical properties of fabricated devices. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 UnportedLicense. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

show abstract

Fabrication of Sub-Lithography-Limited Structures via Nanomasking Technique for Plasmonic Enhancement Applications

Cited by 19 publications

References 36 publications

Effect of incidence and sidewall taper angles on plasmonic metal–semiconductor–metal photodetector enhancements

Effect of incidence and sidewall taper angles on plasmonic metal–semiconductor–metal photodetector enhancements

Modeling and optimization of Au-GaAs plasmonic nanoslit array structures for enhanced near-infrared photodetector applications

Fabrication and analysis of metallic nanoslit structures: advancements in the nanomasking method

Contact Info

Product

Resources

About