Fabrication of stable multi-level resistance states in a Nb-doped Ge₂Sb₂Te₅ device

Abstract

We report a phase-change memory with controllable multiple-resistance states. Many chemical doping studies have been performed on phase-change materials; however, few have focused on chemical bonding between the doped and...

Multilevel optoelectronic hybrid memory based on N-doped Ge2Sb2Te5 film with low resistance drift and ultrafast speed

“…Doping engineering is a simple and effective method to improve the intrinsic properties of GST thin films. So far, various doping elements have been proposed to enhance the comprehensive properties of GST, such as Cr, [15] Sc, [13] C, [16] N, [17] Nb, [18] W, [19,20] Sm, [21] Al, [22] Si, [23] Ti, [24] and so forth. [25] Among others, N doping is a promising selection to enhance the resistance of amorphous and crystalline GST film as well as its thermal stability.…”