Fabrication of small pitch, high definition (HD) 1kx2k/5μm MWIR focal-plane-arrays operating at high temperature (HOT)

Jenkins, James R.; Terterian, Sevag; Tu, B.; Strong, Wyatt; Roebuck, Mark; Lyon, T. J. de; Sharifi, Hasan; Rajavel, R. D.; Caulfield, John; Curzan, J. P.

doi:10.1117/12.2267879

Cited by 6 publications

(4 citation statements)

References 7 publications

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“…IR III-V barrier detector MWIR FPAs with 2k × 2k/10 μm and 2k × 1k/5 μm formats have been demonstrated by developing high aspect ratio dry etching for mesa delineation (FF > 80%) (see figure 59), proper device passivation by dielectric layer and high aspect ratio indium bump schemes (operability > 99.9%). The observed dark current densities indicated that the detector material did not degrade during the epitaxial transfer and subsequent wafer-scale fabrication process [138]. Resulting hybrids operating at 150 K show low NEDT (<20 mK at 150 K using f /2.3 optics), and high operability for both 5 μm and 10 μm pixels.…”

Section: Novel Iii-v Arrays Based On Type-ii Superlatticesmentioning

confidence: 94%

Scaling infrared detectors—status and outlook

Rogalski

2022

Rep. Prog. Phys.

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The predicted “Law 19” benchmark for HgCdTe photodiode performance established in 2019 is a milestone in the development of infrared detectors and make the dream of Elliott and colleagues, who in 1999 wrote that there is no fundamental obstacle to obtaining room temperature operation of photon detectors at room temperature with background-limited performance even in reduced fields of view [C.T. Elliott et al., Appl. Phys. Lett. 74(9), 2881 (1999)]. This circumstance will make it possible to achieve in the near future the room-temperature infrared (IR) arrays operation with high pixel density (small pixels) fully compatible with the background and diffraction-limited performance resulting from the system optics. The advent of smaller pixels also results in superior spatial and temperature resolutions of imaging systems. In megapixel imaging systems, the pixel dimension plays a crucial role in determining critical system attributes such as system size, weight, and power consumption (SWaP). In the paper, the physical limitations of pixel size related to the aperture of the optics, which in turn is wavelength dependent, are described. Since the critical parameter of small pixels is quantum efficiency, more attention has been paid to enhancing the coupling of radiation to the detector. Then, the evaluation for assessing the figure-of-merit of different material systems (especially short wavelength IR colloidal quantum dots, both medium and long wavelength IR novel III-V material systems) relative to bulk HgCdTe alloys is considered. Of the various thermal detectors, particular attention has been focused on bolometer arrays due to their largest share of the global commercial market. Also key challenges in realizing ultimate pixel dimensions in focal plane arrays (FPAs) design are presented for different material systems including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity.

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Section: Novel Iii-v Arrays Based On Type-ii Superlatticesmentioning

confidence: 94%

Scaling infrared detectors—status and outlook

Rogalski

2022

Rep. Prog. Phys.

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“…The robustness of the material, the ability to operate almost in entire infrared region of T2SL technology are likely to challenge its competitor MCT from cost and performance point of view especially for dual-band or large format arrays [6][7][8][9] .…”

Section: Introductionmentioning

confidence: 99%

Development of MWIR T2SL photodetectors at ASELSAN Inc.

Demirer,

Agca,

KALDIRIM

et al. 2023

Infrared Technology and Applications XLIX

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ASELSAN, the largest defense company in Turkey, develops high performance electro-optical systems for various applications. Due to the technical challenges and relatively higher cost associated with MCT technology, there is a search for an alternative material system all over the world, especially for the applications that need relatively low quantum efficiency and high volume production. Research and development activities have been carried out on developing InAs/GaSb T2SL detectors for mid-wavelength infrared (MWIR) technology in ASELSAN. In this paper, recent results for 15μm pitch MWIR T2SL and 10μm pitch MWIR T2SL detectors are presented. InAs/GaSb T2SL epilayers are used for FPA fabrication with mesa pixel structures. Typically, over 99% operability and less than 25 mK NETD values are achieved for 15 μm pitch 640x512 format MWIR T2SL FPAs at IDDCA level (F/4). Besides ongoing efforts on development of FPAs with 15 μm pixel pitch, development activities for pixel pitch reduction are also initiated recently for MWIR T2SL FPAs for improving resolution and promising results are achieved. For this purpose, MWIR T2SL FPAs with 1280x1024/10μm resolution/pixel pitch are fabricated and NETD values less than 25 mK (F/2) with pixel operability of 97% are achieved for the first prototypes.

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“…While these configurations aim to minimize surface leakage currents and maximize the fill factor by not exposing the mesa sidewalls with an interpixel trench, not fully delineating the pixel penalizes the MTF values mainly due to high electrical crosstalk [6], [12], [13]. However, state-of-the-art MWIR T2SL detectors implement a fully delineated geometry with appropriate passivation of the mesa sidewalls to suppress surface leakage currents [14], [15]. In addition, thanks to this geometry, optical concentration in the pixel has been observed as the pixel pitch reduces, thus mitigating the fill factor loss due to the trench etching and increasing the signal-to-noise ratio in smaller pixel size [7], [16], [17].…”

mentioning

confidence: 99%

Simulation and Characterization of the Modulation Transfer Function in Fully Delineated Type-II Superlattices Infrared Detectors

Ramos,

Delmas,

Ivanov

et al. 2024

IEEE Trans. Electron Devices

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The modulation transfer function (MTF) in fully delineated 15 µm pitch type-II superlattice (T2SL) midwave infrared (IR) detectors is studied theoretically and experimentally. Theoretically, a 2-D model to simulate the spot scan (SS) profile is presented and used to compute the MTF as a function of the wavelength and the array geometry (pitch size, trench width). The dependence of the detector trench on the MTF is also evaluated experimentally by the edge spread function (ESF) method according to the ISO12233 standard. The experimental results show an excellent agreement with the theoretical model, reporting an MTF of 0.61 and 0.60 at the Nyquist frequency for 1 and 2 µm trench, respectively. With the simulation model, the effect of the increased optical crosstalk for smaller pixel pitch is discussed as a function of the trench width (0.5, 1, and 2 µm) and incidence angle up to ±30 • . Simulation results show MTF values at the Nyquist frequency between 0.61-0.62, 0.58-0.60, and 0.55-0.57 with an average degradation of 1%, 2%, and 7% at an angle of ±30 • compared to normal incidence for the 10, 7.5, and 5 µm pitch, respectively.

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Fabrication of small pitch, high definition (HD) 1kx2k/5μm MWIR focal-plane-arrays operating at high temperature (HOT)

Cited by 6 publications

References 7 publications

Scaling infrared detectors—status and outlook

Scaling infrared detectors—status and outlook

Development of MWIR T2SL photodetectors at ASELSAN Inc.

Simulation and Characterization of the Modulation Transfer Function in Fully Delineated Type-II Superlattices Infrared Detectors

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