Fabrication of single optical centres in diamond—a review

Orwa, J. O.; Greentree, Andrew D.; Aharonovich, Igor; Alves, Andrew; Donkelaar, Jessica van; Stacey, Alastair; Prawer, S.

doi:10.1016/j.jlumin.2009.12.028

Cited by 69 publications

(55 citation statements)

References 75 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In recent years, a growing interest in this research field led to the discovery, investigation and fabrication of several classes of impurity-related defects [1][2][3][4][5][6][7][8].…”

Section: Main Textmentioning

confidence: 99%

Photo-physical properties of He-related color centers in diamond

Prestopino

Marinelli

Verona

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm and 560 nm created in three different diamond substrates upon implantation with 1.3 MeV He + ions and subsequent annealing. The spectral features of the HR centers were studied in an "optical grade" diamond substrate as a function of several physical parameters, namely the measurement temperature, the excitation wavelength and the intensity of external electric fields. The emission lifetimes of the 535 nm and 560 nm lines were also measured by means of time-gated photoluminescence measurements, yielding characteristic decay times of (29 ± 5) ns and (106 ± 10) ns, respectively. The Stark shifting of the HR centers under the application of an external electrical field was observed in a CVD diamond film equipped with buried graphitic electrodes, suggesting a lack of inversion symmetry in the defects' structure. Furthermore, the photoluminescence mapping under 405 nm excitation of a "detector grade" diamond sample implanted at a 1×10 10 cm -2 He + ion fluence enabled to identify the spectral features of both the HR emission lines from the same localized optical spots. The reported results provide a first insight towards the understanding of the structure of He-related defects in diamond and their possible utilization in practical applications. MAIN TEXTColor centers in diamond are appealing physical systems for application in emerging quantum technologies. In recent years, a growing interest in this research field led to the discovery, investigation and fabrication of several classes of impurity-related defects [1][2][3][4][5][6][7][8].The formation of optically active defects in diamond upon He implantation followed by annealing in vacuum was recently reported [9]. The spectral features of these defects consist of two narrow emission lines at 536 nm and 560.5 nm, and a phonon sideband in the 572-630 nm spectral range. Following their initial observation in cathodoluminescence (CL) [10,11], their optical activity was investigated in both photoluminescence (PL) and electroluminescence (EL) [9,12]. The need of understanding the possible formation of stable optically active centers, whose current (and still tentative) attribution is based on He incorporation in the diamond lattice, motivates a further investigation of their opto-physical properties. More specifically, the centers have so far been attributed to the He-vacancy complex [13], and density functional theory calculations demonstrated that both this structure and the interstitial He defect could result in stable complexes in the diamond lattice [14]. Apart from this limited body of works, a systematic set of experimental results on the characterization of the ...

show abstract

“…In recent years, a growing interest in this research field led to the discovery, investigation and fabrication of several classes of impurity-related defects [1][2][3][4][5][6][7][8].…”

Section: Main Textmentioning

confidence: 99%

Photo-physical properties of He-related color centers in diamond

Prestopino

Marinelli

Verona

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Recently, silicon-vacancy [33,34], germanium-vacancy [35][36][37], and tin-vacancy [38,39] centers have been demonstrated to possess characteristics that are promising for single-photon applications. In addition, attempts at creating optical centers related to other impurities in diamond, such as Ni [40], Cr [41], and Eu [42] have been reported. In this context, the contribution by Vladimir Nadolinny, Andrey Komarovskikh, and Yuri Palyanov provides a comprehensive review of point defects in diamond related to the incorporation of large impurity atoms into the diamond crystal lattice [43].…”

Section: Some Facets Of Synthetic Diamond Crystalsmentioning

confidence: 99%

The Many Facets of Diamond Crystals

Palyanov

2018

Crystals

View full text Add to dashboard Cite

This special issue is intended to serve as a multidisciplinary forum covering broad aspects of the science, technology, and application of synthetic and natural diamonds. This special issue contains 12 papers, which highlight recent investigations and developments in diamond research related to the diverse problems of natural diamond genesis, diamond synthesis and growth using CVD and HPHT techniques, and the use of diamond in both traditional applications, such as mechanical machining of materials, and the new recently emerged areas, such as quantum technologies. The results presented in the contributions collected in this special issue clearly demonstrate that diamond occupies a very special place in modern science and technology. After decades of research, this structurally very simple material still poses many intriguing scientific questions and technological challenges. It seems undoubted that diamond will remain the center of attraction for many researchers for many years to come.

show abstract

“…Присут-ствие кремния объясняется использованием кремниевых подложек, материал которых диффундирует в прилегаю-щие области алмазного кристаллита, расположенные на вершине пирамидальных кристаллитов, при их форми-ровании в ходе ГФХО-процесса [2,19,20].…”

Section: результаты и их обсуждениеunclassified

Люминесцентные Свойства Монокристаллов Алмаза Пирамидальной Формы

Алексеев¹,

Туякова²,

Образцова³

et al. 2016

Физика Твердого Тела

View full text Add to dashboard Cite

Проведено исследование люминесцентных свойств иглоподобных кристаллов алмаза, полученных путем селективного окисления текстурированных поликристаллических алмазных пленок. Алмазные пленки выращены методом химического газофазного осаждения из метан-водородной смеси, активированной разрядом постоянного тока. Для отдельных иглоподобных кристаллов получены спектры фото- и катодолюминесценции, а также пространственное распределение интенсивности излучения на различных длинах волн. На основании полученных спектральных характеристик сделаны выводы о наличии в их структуре оптически активных дефектов, содержащих примеси азота и кремния, а также о существенном влиянии структурных дефектов на спектры люминесценции. Работа выполнена при финансовой поддержке Российского научного фонда (проект N 14-12-00511) и Программы поддержки молодых ученых Президента РФ (грант МК-6201.2014.2).

show abstract

Fabrication of single optical centres in diamond—a review

Cited by 69 publications

References 75 publications

Photo-physical properties of He-related color centers in diamond

Photo-physical properties of He-related color centers in diamond

The Many Facets of Diamond Crystals

Люминесцентные Свойства Монокристаллов Алмаза Пирамидальной Формы

Contact Info

Product

Resources

About