Fabrication of silicon quantum dots in SiNx multilayer using hot-wire CVD

Panchal, Ashish K.; Solanki, Chetan Singh

doi:10.1016/j.jcrysgro.2009.03.013

Cited by 39 publications

(37 citation statements)

References 33 publications

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“…2, respectively. The results are in better agreement with the PL peak in shorter wavelengths (450-620 nm) of silicon quantum dots in SiN x film [17,18]. However, for the model of the band-tail states, the emission usually occurs at wavelengths higher than 680 nm [7].…”

Section: Discussionsupporting

confidence: 75%

The effects of annealing temperature on photoluminescence of silicon nanoparticles embedded in SiNx matrix

Jiang

Zeng

Zhang

2011

Journal of Non-Crystalline Solids

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Section: Discussionsupporting

confidence: 75%

The effects of annealing temperature on photoluminescence of silicon nanoparticles embedded in SiNx matrix

Jiang

Zeng

Zhang

2011

Journal of Non-Crystalline Solids

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“…At 700°C, the films are crystallized and the TO vibration mode of crystalline silicon is observed around 520 cm −1 . The low frequency shoulder of the 520 cm −1 peak of the spectra from 700 to 1100°C confirms the formation of silicon nanostructures [6,7]. The intensity of this crystalline peak increases with increase in temperature due to increasing crystallinity of the films [8] as also indicated by the increasing values of the crystalline mass fraction, f. The similar f values at 1000 and 1100°C imply that the crystallization process nears completion at 1000°C for the 20 nm ASL.…”

Section: Resultsmentioning

confidence: 57%

Crystallized silicon nanostructures — experimental characterization and atomistic simulations

et al. 2014

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We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100°C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon (nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated amorphous silicon and silicon oxide (SiO 2 ) were deposited by plasma enhanced chemical vapor deposition on crystalline silicon and Corning glass substrates. The crystallized structure consisting of nc-Si structures embedded in an amorphous matrix were further characterized through XRD, Raman spectroscopy, and Fourier transform infrared measurements. We are able to show the different stages of nanostructure formation and how the sizes and the crystallized mass fraction can be controlled in our experimental synthesis. The crystallized silicon structures with large crystalline filling fractions exceeding 50% have been simulated with a robust classical molecular dynamics technique. The crystalline filling fractions and structural order of nc-Si obtained from this simulation are compared with our Raman and XRD measurements.

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“…This is responsible for creating defects at Si-QDs boundaries and at Si-QD/SiNX interfaces. It is worth to note that no Si-QDs are formed in the a-Si layers of as-deposited ML films confirmed by HRTEM micrograph (not shown) [5]. It is very small for the as-deposited ML film.…”

Section: Methodsmentioning

confidence: 75%

Co-relation between capacitance-voltage, conductance-voltage and photoconductive properties of the as-deposited and annealed a-Si/SiN<inf>x</inf> multilayer films prepared using hot-wire CVD

Panchal

Mathew

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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In this paper, the electrical properties of the as-deposited and the annealed a-Si/SiNX multilayer (ML) films are compared. The a-Si/SiNX ML films are prepared at 250ºC using hot-wire chemical vapor deposition (HWCVD) technique. Silicon quantum dots (Si-QDs) are formed in the a-Si layers of ML films upon annealing at 850°C. Metal insulator semiconductor (MIS) structures containing the ML films are characterized with high frequency capacitance-voltage (C-V), conductance-voltage (G-V) and photo-current measurements. These characterizations show that the annealed ML films have high defects centers than the as-deposited ML films. A shift in the C-V plot and a peak shift in the G-V plot for the annealed ML film are due to the charge storage in the defects centers and the quantized states of Si-QDs. The defect centers introduced low photo-response for the annealed ML film (Si-QD structure) than the as-deposited ML films.

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Fabrication of silicon quantum dots in SiNx multilayer using hot-wire CVD

Cited by 39 publications

References 33 publications

The effects of annealing temperature on photoluminescence of silicon nanoparticles embedded in SiNx matrix

The effects of annealing temperature on photoluminescence of silicon nanoparticles embedded in SiNx matrix

Crystallized silicon nanostructures — experimental characterization and atomistic simulations

Co-relation between capacitance-voltage, conductance-voltage and photoconductive properties of the as-deposited and annealed a-Si/SiN<inf>x</inf> multilayer films prepared using hot-wire CVD

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