Abstract:Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and Si 3 N 4 layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transpor… Show more
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