Fabrication of silicon nanocrystals using sequential Au ion implantation
Gayatri Sahu,
Rajesh Kumar,
D. P. Mahapatra
Abstract:Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the second stage is found to produce strained Si NCs. An annealing at a temperature as low as 500 o C is seen to result in strain free NCs showing quantum confinement effects. Higher temperature annealing of the samples is found to result in growth in size from recrystallization of t… Show more
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