1999
DOI: 10.1111/j.1151-2916.1999.tb02256.x
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Fabrication of Silicon Carbide Whisker/Alumina Composite by Thermal‐Gradient Chemical Vapor Infiltration

Abstract: SiC(w)/Al 2 O 3 composites were made from an AlCl 3 -H 2 -CO 2 mixture by a thermal-gradient chemical vapor infiltration (CVI) method. Al 2 O 3 was deposited from the reaction of AlCl 3 and H 2 O, which was produced from the oxidation of H 2 by CO 2 . The densification rate was measured at various reactant compositions and total pressures. When the reaction rate or total pressure increased, the rate-controling step shifted from H 2 O production to AlCl 3 diffusion, which led to premature pore closing. To obtai… Show more

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Cited by 11 publications
(5 citation statements)
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“…After gelation and drying, the xerogel containing SiC nanoparticles is calcined, crushed, sieved, and finally used for preparation of nanocomposites. Other attempts to prepare the nanocomposite powders use more exotic techniques, such as a Teflon-activated self-propagating aluminothermic reaction (Equation (1)) [ 28 ]: 4Al + SiO 2 + 3C→3SiC + 2Al 2 O 3 or thermal-gradient chemical vapor infiltration of SiC porous preforms with a gaseous mixture of AlCl 3 , H 2 , and CO 2 , resulting in inhomogeneous distribution of constituent phases [ 29 ].…”
Section: Preparation Of Nanocompositesmentioning
confidence: 99%
“…After gelation and drying, the xerogel containing SiC nanoparticles is calcined, crushed, sieved, and finally used for preparation of nanocomposites. Other attempts to prepare the nanocomposite powders use more exotic techniques, such as a Teflon-activated self-propagating aluminothermic reaction (Equation (1)) [ 28 ]: 4Al + SiO 2 + 3C→3SiC + 2Al 2 O 3 or thermal-gradient chemical vapor infiltration of SiC porous preforms with a gaseous mixture of AlCl 3 , H 2 , and CO 2 , resulting in inhomogeneous distribution of constituent phases [ 29 ].…”
Section: Preparation Of Nanocompositesmentioning
confidence: 99%
“…When the diffusion rate of chlorides into the voids is rapid compared with the rate of H 2 O production, the oxides deposition rate is proportional to the rate of H 2 O production, which is the rate-controlling step. Because chlorides exist in excess of the H 2 O within the pores, the oxides deposition rate is independent of chlorides concentration [11]. On the other hand, when the diffusion rate of chlorides is not as rapid as the rate of H 2 O production, the oxides deposition rate is not proportional to the rate of H 2 O production, and diffusion of chlorides is the rate-controlling step in CVI.…”
Section: Resultsmentioning
confidence: 99%
“…The reaction rate constants of the decomposition of the reactant are the slopes of the trend lines. The results were successfully applied to the numerical simulation of a thermal-gradient chemical vapor infiltration process for the production of silicon carbide whisker/ alumina composites [5,14,15].…”
Section: Reaction Pathmentioning
confidence: 99%