“…While electron beam lithography can enable patterning down to the 10s of nm regime, self-assembly of shapes, patterns, or particles can be incredibly useful, as it reduces the number of processing steps, the possibility for contamination, and may even improve accuracy in creating the pattern. Recently, the dewetting of less reactive metals, typically in columns VIII or IB of the periodic table (i.e., Fe [15], Ni [16] [17], Cu [18], Pd, Ag [19] [20] [21], Pt [22] [20], or Au [23] [24] [25]) has been exploited to create nanoscale patterns on various substrates relevant to nanoelectronics, including SiO2 [22] [23] [24] [25] [19] [20] [18], Si3N4 [16], Al2O3 [26], GaN [16], and InGaN [17]. Dewetting of Ag on MoS2 also allows for the creation of adjacent pairs of islands for surface enhanced Raman scattering (SERS) [27].…”