Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing

Kudo, Takashi; Kasama, Tsuyoshi; Ikeda, Takeshi; Hata, Yoshinobu; Tokonami, Shinji; Yokoyama, Shiyoshi; Kikkawa, Takamaro; Sunami, Hideo; Ishikawa, Tomohiro; Suzuki, Masato; Okuyama, Katsuro; Tabei, Tetsuo; Ohkura, Kazuhiro; Kayaba, Yasuhisa; Tanushi, Yuuichirou; Amemiya, Yoshihito; Cho, Yoshinori; Monzen, Tomomi; Murakami, Yuji; Kuroda, Akio; Nakajima, Akira

doi:10.1143/jjap.48.06fj04

Cited by 14 publications

(10 citation statements)

References 15 publications

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“…To produce nanowire structures, top-down technologies use nanofabrication tools such as e-beam lithography [10,13,22,29,[40][41][42][43][44][45][46][47][48], lithographically patterned NW electrodeposition (LPNE) [49], nano-stencil lithography [50], or nanoimprint lithography [51]. Various sizes of NWs have been produced by the e-beam lithography-based methods, with typical widths of 50 nm and lengths ranging from 20 m to 1 mm [10,22].…”

Section: Fabrication Of Silicon Nanowire Biosensorsmentioning

confidence: 99%

Silicon nanowire biosensor and its applications in disease diagnostics: A review

Zhang

Ning

2012

Analytica Chimica Acta

240

156

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Section: Fabrication Of Silicon Nanowire Biosensorsmentioning

confidence: 99%

Silicon nanowire biosensor and its applications in disease diagnostics: A review

Zhang

Ning

2012

Analytica Chimica Acta

240

156

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“…Highly sensitive detection of target ions or biomolecules has been obtained using a nanowire channel in FET sensors. [8][9][10][11] However, FET sensors with even higher detection sensitivity are preferable, especially for dilute solutions of targets, which have relatively high electrical noise levels.…”

Section: Takashi Kudo and Anri Nakajima A)mentioning

confidence: 99%

Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip

Kudo

Nakajima

2012

Applied Physics Letters

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Biomolecule detection was achieved using a Si single-electron transistor (SET) for highly-sensitive detection. A multiple-island channel-structure was used for the SET to enable room-temperature operation and to increase sensitivity. Coulomb oscillation shifted against the gate voltage due to biotin-streptavidin binding. Coulomb oscillation has a possibility to increase transconductance (gm), and a higher gm leads to greater sensitivity to a charged target. Since a Si structure is important for integrating label-free-biomolecule and/or ion sensors into large-scale-integrated circuits, a Si SET with multiple islands should enable the integration of a sensor system on a single chip for multiplexed detections and simultaneous diagnoses.

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“…Nanowire FETs for the sensors are substantially more sensitive than the conventional FETs having a wide channel; this is because carriers in a narrow channel are more effectively affected by the charge on the gate insulator than those in a wide channel. Highly sensitive detections of target ions or biomolecules were reported using nanowire channels in FET sensors [9][10][11][12][13][14][15][16][17][18][19]. There are two types of nanowire fabrication methods.…”

Section: Introductionmentioning

confidence: 99%

“…Kim et al detected PSA with the antibody of PSA (anti-PSA) immobilized on the nanowire surface [15]. Kudo et al [16] and Knopfmacher et al [17] fabricated pH sensors. Materials other than Si were also used for nanowire FET biosensors.…”

Section: Introductionmentioning

confidence: 99%

Application of Single-Electron Transistor to Biomolecule and Ion Sensors

Nakajima

2016

Applied Sciences

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The detection and quantification of chemical and biological species are the key technology in many areas of healthcare and life sciences. Field-effect transistors (FETs) are sophisticated devices used for the label-free and real-time detection of charged species. Nanowire channels were used for highly sensitive detections of target ion or biomolecule in FET sensors, however, even significantly higher detection sensitivity is required in FET sensors, especially when the target species are dilute in concentration. Since the high detection sensitivity of nanowire FET sensors is due to the suppression of the carrier percolation effect through the channel, the channel width has to be decreased, leading to the decrease in the transconductance (g m). Therefore, g m should be increased while keeping channel width narrow to obtain higher sensitivity. Single-electron transistors (SETs) are a promising candidate for achieving higher detection sensitivity due to the Coulomb oscillations. However, no reports of an SET-based ion sensor or biosensor existed, probably because of the difficulty of the room-temperature operation of SETs. Recently, room-temperature SET operations were carried out using a Si multiple-island channel structure. This review introduces the mechanism of ultra-sensitive detection of ions and biomolecules based on an SET sensor and the experimental results.

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Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing

Cited by 14 publications

References 15 publications

Silicon nanowire biosensor and its applications in disease diagnostics: A review

Silicon nanowire biosensor and its applications in disease diagnostics: A review

Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip

Application of Single-Electron Transistor to Biomolecule and Ion Sensors

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