Fabrication of servo-integrated template for 1.5  Teradot/inch<sup>2</sup>bit patterned media with block copolymer directed assembly

Yang, XiaoMin; Xiao, Shuaigang; Hsu, Yautzong; Wang, HongYing; Hwu, Justin J.; Steiner, Philip; Wago, K.; Lee, Kyung Hwa; Kuo, David

doi:10.1117/1.jmm.13.3.031307

Cited by 9 publications

(5 citation statements)

References 28 publications

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“…Forming arbitrary nonregular patterns, such as servo patterns, is challenging for BCP lithography. When topographic guiding patterns are used, servo patterns can be directly written as trenches by e-beam and then filled with BCP. , When chemical guiding patterns are used, the BCP must be coerced into forming servo patterns. If particularly complex servo patterns are required, BCPs cannot form the necessary patterns, and servo patterns have to be integrated by applying an additional lithographic step without DSA.…”

Section: Resultsmentioning

confidence: 99%

The Limits of Lamellae-Forming PS-b-PMMA Block Copolymers for Lithography

et al. 2015

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We explore the lithographic limits of lamellae-forming PS-b-PMMA block copolymers by performing directed self-assembly and pattern transfer on a range of PS-b-PMMA materials having a full pitch from 27 to 18.5 nm. While directed self-assembly on chemical contrast patterns was successful with all the materials used in this study, clean removal of PMMA domains and subsequent pattern transfer could only be sustained down to 22 nm full pitch. We attribute this limitation to the width of the interface, which may represent more than half of the domain width for materials with a critical dimension below 10 nm. With the limit of pattern transfer for PS-b-PMMA set at ∼11 nm, we propose an integration scheme suitable for bit patterned media for densities above 1.6 Tdot/in(2), which require features below this limit. Directed self-assembly was carried out on chemical contrast patterns made by a rotary e-beam lithography system, and pattern transfer was carried out to demonstrate fabrication of large area (up to 25 mm-wide annular band of circular tracks) nanoimprint templates for bit patterned media. We also demonstrate compatibility with hard disk drive architecture by fabricating patterns with skewed radial lines with constant angular pitch and with servo patterns that are needed in hard disk drives to generate a radial positional error signal (PES).

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Section: Resultsmentioning

confidence: 99%

The Limits of Lamellae-Forming PS-b-PMMA Block Copolymers for Lithography

et al. 2015

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“…For instance Kuo's group used two types of BCPs, cylinder-forming PS-b-PMMA and sphere-forming PS-b-PDMS, to produce integrated templates with both servo and data zones, achieving an area density of 1 Tb in −2 and 1.5 Tb in −2 , respectively. In both cases, a nanoimprint technique was used to create the pre-pattern for DSA, as depicted in figure 34 [119][120][121]. In another work reported by Doerk et al from Western Digital, self-aligned double patterning (SADP) was applied on an as-produced BCP pattern to achieve sub-10 nm feature size with successful pattern transfer into the silicon substrate [122].…”

Section: Bit-patterned Media Fabricationmentioning

confidence: 99%

Directed self-assembly of block copolymers for sub-10 nm fabrication

Chen

Xiong

2020

Int. J. Extrem. Manuf.

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Directed self-assembly (DSA) emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography. DSA achieves high-resolution patterning by molecular assembly that circumvents the diffraction limit of conventional photolithography. Recently, the International Roadmap for Devices and Systems listed DSA as one of the advanced lithography techniques for the fabrication of 3–5 nm technology node devices. DSA can be combined with other lithography techniques, such as extreme ultra violet (EUV) and 193 nm immersion (193i), to further enhance the patterning resolution and the device density. So far, DSA has demonstrated its superior ability for the fabrication of nanoscale devices, such as fin field effect transistor and bit pattern media, offering a variety of configurations for high-density integration and low-cost manufacturing. Over 1 T in−2 device density can be achieved either by direct templating or coupled with nanoimprinting to improve the throughput. The development of high χ block copolymer further enhances the patterning resolution of DSA. In addition to its superiority in high-resolution patterning, the implementation of DSA on a 300 mm pivot line fully demonstrates its potential for large-scale, high-throughput, and cost-effective manufacturing in industrial environment.

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“…While critical feasibility milestones were demonstrated such as integration with aperiodic servo patterns 29 and magnetic recording demonstrations 19,30 at densities ranging from 1-2 Tdot/in 2 (Figure 1d-e), other challenges loomed large for BPM technology. Ultimately, the lithographic difficulties to fabricate skinnier, longer bit cells with higher aspect ratios 19 to boost drive performance, integration challenges, cost pressures, a shifting market landscape, and the advent of other technologies such as three-dimensional flash and heatassisted magnetic recording 31 all contributed to deprioritization of BPM.…”

Section: For Magnetic Recording Devicesmentioning

confidence: 99%