Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Mohan, Premila; Nakajima, Fumito; Akabori, Masashi; Motohisa, Junichi; Fukui, Takashi

doi:10.1063/1.1593823

Cited by 25 publications

(21 citation statements)

References 8 publications

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“…Formation of various kind of nanostructures have been reported on SA growth both on (001) and (111)B substrates using metalorganic vapor phase epitaxy (MOPVE). In the case of SA-MOVPE growth on (111)B GaAs, nanostructures surrounded by vertical or inclined {110} facets are formed depending on the growth conditions, which makes this approach attractive and powerful to form quantum dots [1], hexagonal structures [2], and Kagome-lattice structures [3] Recently, we have reported on the SA-MOVPE growth on (111)B substrates for the applications to the photonic crystals (PhCs), which are the periodic structure of dielectric materials with their period (or lattice constant) Preprint submitted to Physica Ea close to the light wavelength. Formation of the air-hole array of GaAs [4,5], and pillar arrays of InGaAs [6] and InP [7] with a down to 0.4 µm have been reported.…”

Section: Introductionmentioning

confidence: 99%

Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE

Motohisa

Takeda

Inari

et al. 2004

Physica E: Low-dimensional Systems and Nanostructures

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We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By doing growth on SiO 2 masked (111)B GaAs substrates with circular or hexagonal hole openings, extremely uniform array of hexagonal GaAs/AlGaAs pillars consisting {110} vertical facets with their diameter of order of 100 nm were obtained. Unexpectingly strong intense light emission was observed for the room temperature photoluminescence measurement of the pillar arrays in triangular lattice, which is promising for the application to the photonic crystals to enhance the light extraction efficiency from the materials with high refractive index. Furthermore, it was also found that hexagonal pillars with size 60 nm and large aspect ratio (> 100) by reducing the size of initial hole size of mask, opening a possibility to grow nanowires using epitaxial growth. (This article is published in Physica E, 23, 3-4, pp. 298-304 (2004).)

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Section: Introductionmentioning

confidence: 99%

Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE

Motohisa

Takeda

Inari

et al. 2004

Physica E: Low-dimensional Systems and Nanostructures

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“…This type of lattice can be easily fabricated by modern patterning technique 26 , or observed in reconstructed semiconductor surfaces 27 . The presence of a transverse magnetic field has a deeper impact on electronic properties in a kagome lattice which has also been reflected in our SHE study.…”

Section: Introductionmentioning

confidence: 99%

Spin Hall effect in a kagome lattice driven by Rashba spin-orbit interaction

Dey

Maiti

Karmakar

2012

Journal of Applied Physics

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-Aviv, Tel Aviv-69978, IsraelUsing four-terminal Landauer-Büttiker formalism and Green's function technique, in this present paper, we calculate numerically spin Hall conductance (SHC) and longitudinal conductance of a finite size Kagome lattice with Rashba spin-orbit (SO) interaction both in presence and absence of external magnetic flux in clean limit. In the absence of magnetic flux, we observe that depending on the Fermi surface topology of the system SHC changes its sign at certain values of Fermi energy. Unlike the infinite system (where SHC is a universal constant ± e 8π ), here SHC depends on the external parameters like SO coupling strength, Fermi energy, etc. We show that in the presence of any arbitrary magnetic flux, periodicity of the system is lost and the features of SHC tends to get reduced because of elastic scattering. But again at some typical values of flux (φ = . . ., etc.) the system retains its periodicity depending on its size and the features of spin Hall effect (SHE) reappears. Our predicted results may be useful in providing a deeper insight into the experimental realization of SHE in such geometries.

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“…The artificial lattices have two fascinating characteristics that are different from those of real crystals. One is the flexibility to design various lattice shapes [1][2][3]. The other is the controllability of the number of electrons in a lattice, which is realized by applying a gate voltage [4].…”

Section: Introductionmentioning

confidence: 99%

Symmetry Breaking and Electron Transport in Kagome-Chain Systems

Ishii

Nakayama

2005

e-J. Surf. Sci. Nanotechnol.

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Among various lattices, the Kagomé lattice is special because it has a completely flat electronic band whose eigenstates have both localized and itinerant characters. We investigate electron transport properties of finite-size Kagomé-lattice-chain systems, which have multi-degenerate flat-band-like states, using a simple tight-binding model and a nonequilibrium Green function method. It is found that the flat-band-like-state channel in a Kagomé-latticechain system generates a large electronic current along the chain when a small electric field is applied perpendicular to the chain, while no current is generated along the chain when an electric field is applied along the chain. We show that such unique transport characteristics originate from the symmetry breaking of flat-band-like states by the external electric fields.

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Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Cited by 25 publications

References 8 publications

Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE

Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE

Spin Hall effect in a kagome lattice driven by Rashba spin-orbit interaction

Symmetry Breaking and Electron Transport in Kagome-Chain Systems

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