2013
DOI: 10.1016/j.mee.2013.03.041
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Fabrication of self-supporting antireflection-structured film by UV–NIL

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Cited by 15 publications
(9 citation statements)
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“…Finally, the CGH pattern was transferred onto a silicon wafer by NIL with the inverted mold. When UV-NIL was carried out, the sample was coated with a release agent (Optool DSX; Daikin Industries Co., Tokyo) [14]. The combination of the EB resist and the release agent allows UV-NIL duplication of a pattern with a high aspect ratio (over 3) [15]; the aspect ratio of our target pattern is at the most 1.2.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Finally, the CGH pattern was transferred onto a silicon wafer by NIL with the inverted mold. When UV-NIL was carried out, the sample was coated with a release agent (Optool DSX; Daikin Industries Co., Tokyo) [14]. The combination of the EB resist and the release agent allows UV-NIL duplication of a pattern with a high aspect ratio (over 3) [15]; the aspect ratio of our target pattern is at the most 1.2.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…An EIS-210ER (Elionix, Inc.) ion-beam apparatus equipped with an electron-cyclotron-resonance-type ion source was used. In this work, the ARS was self-assembled on the GCs at low acceleration voltage of 300 V for 60 min of etching condition; details are given in [17]. Fabricated molds at low acceleration voltage can possibly generate small RF during UV-NIL owing to the formation of the narrow pitches and effective heights on the molds.…”
Section: Ars Mold Fabricationmentioning
confidence: 99%
“…Nanoimprint lithography is used industrially for nanofabrication, and has been used for semiconductors, patterned media, and optical devices such as light-emitting diodes, flat panel displays, photonic crystals, and solar cells . Nanoimprint lithography, which uses molded fluid resins cured by exposure to ultraviolet (UV) light, is referred to as UV nanoimprint lithography .…”
Section: Introductionmentioning
confidence: 99%