Fabrication of Sb2S3 thin films by magnetron sputtering and post-sulfurization/selenization for substrate structured solar cells

Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3 Thin Film Prepared via Magnetron Sputtering

“…To further evaluate the effect of Te doping on the band structure, the band gap width ( E g ) of the thin films was calculated using the following formulas: where α is the absorption coefficient; d is thickness of thin film (350 nm); and R and T represent the reflectance and transmittance, respectively [ 35 ]. Equation (4) is a classical Tauc relationship, where B is a constant; υ is the photo frequency; h is the Planck’s constant; and r = 2 for an indirect band gap semiconductor and r = 0.5 for a direct band gap semiconductor [ 4 ]. As shown in Figure 5 c, the as-deposited thin film possessed a direct band gap of 1.65 eV; the value remarkably decreased to around 1.27 eV after annealing due to the change in atomic arrangement from disorder to order.…”

“…In addition, the complex composition of CIGS is an issue for industrial production. To overcome these problems, many researchers have explored other earth-abundant and nontoxic absorber materials that consist of ribbons, for instance, antimony sulfide (Sb 2 S 3 ) [ 3 , 4 ] and antimony selenide (Sb 2 Se 3 ) [ 5 , 6 , 7 ]. The ribbons are held together by weak van der Waals forces.…”

Wide Bandgap Sb2S3 Solar Cells

“…Lei et al [62] reported the successful copper (Cu) doped Sb 2 S 3 via RF sputtering. Luo et al [39] also deposited Sb 2 S 3 by RF magnetron sputtering, and used as an absorber in substrate structure-based Sb 2 S 3 solar cell. The experimental schematic is illustrated in Figure 4a.…”

“…Reproduced with permission. [39] Copyright 2020, Elsevier. b) Schematic diagram of the RTE technique for deposition of Sb 2 S 3 thin film.…”

“…/CdS/ITO/Ag RF magnetron sputtering j) 0.30 10. 33 30.84 0.95 2020/ [39] glass/Mo/Sb 2 S 3 /CdS/i-ZnO/Al-ZnO/Ni:Al DC-magnetron sputtering k) 0.46 13.6 32.4 1.86 2020/ [40] a) Post-selenization; b) Post-sulfurization; c) Post-treatment via CdCl 2 ; d) Thermal evaporation; e) Rapid thermal evaporation; f) Closed space sublimation; g) Vapor transport deposition; h) Vertical vapor transport deposition; i) Evaporation of Sb and post-sulfurization; j) Radio frequency magnetron sputtering; k) Direct current magnetron sputtering. [41] c-TiO 2 /m-TiO 2 a) /Sb 2 S 3 /P3HT/Au CBD 0.62 12.8 61.2 4.9 2012/ [42] ZnO/Sb 2 S 3 /P3HT/Ag T.E 0.45 12.56 42 2.4 2012/ [43] c-TiO 2 /m-TiO 2 /Sb 2 S 3 b)…”