2019
DOI: 10.1007/s10904-019-01097-0
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Fabrication of Pure Sb2S3 and Fe (2.5%): Sb2S3 Thin Films and Investigation Their Properties

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Cited by 5 publications
(4 citation statements)
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“…There are four important doping positions, namely at the surface, at the grain boundary, in the lattice by replacing host atoms, and interstitial. The doping effects in Sb 2 S 3 absorbers for thin films [48,50,91,96,97] and solar cells [25,49,71,[98][99][100][101][102][103] are discussed below.…”
Section: Doping Strategiesmentioning
confidence: 99%
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“…There are four important doping positions, namely at the surface, at the grain boundary, in the lattice by replacing host atoms, and interstitial. The doping effects in Sb 2 S 3 absorbers for thin films [48,50,91,96,97] and solar cells [25,49,71,[98][99][100][101][102][103] are discussed below.…”
Section: Doping Strategiesmentioning
confidence: 99%
“…Nar et al reported in two separate studies on the preparation of Co and Fe doped Sb 2 S 3 thin films on Zn 2 SnO 4 coated FTO conductive glasses using CBD method. [50,96] Co doping with only 1% increased the energy band gap of Sb 2 S 3 from 1.89 to 2.02 eV, while the Fe doped (2.5%) Sb 2 S 3 film exhibited an energy band gap of 2.00 eV. Interestingly, these authors also showed PV properties including J-V curves and incident photon-to-current conversion efficiency (IPCE) measurements of their Co and Fe doped Sb 2 S 3 samples, despite no details on the device (solar cells) fabrication and analysis were provided in the papers.…”
Section: Co and Fe Dopingmentioning
confidence: 99%
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