Fabrication of precisely controlled silicon wire and cone arrays by electrochemical etching

Seo, Hong-Seok; Li, Xiaopeng; Um, Han‐Don; Yoo, Bongyoung; Kim, Jae Hyun; Kim, Kang-Pil; Cho, Yong Woo; Lee, Jung-Ho

doi:10.1016/j.matlet.2009.09.005

Cited by 19 publications

(5 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, por-Si studies are widely cited in the literature. With suitable control of the etchant, por-Si QDs can become elongated, [35] thus breaking confinement in one direction implying they are more wire-like; a detailed discussion is provided in Ref. 36.…”

Section: Quantum Wiresmentioning

confidence: 99%

Quantum confinement in Si and Ge nanostructures

Barbagiovanni

Lockwood

Simpson

et al. 2012

Journal of Applied Physics

178

163

View full text Add to dashboard Cite

We apply perturbative effective mass theory as a broadly applicable theoretical model for quantum confinement (QC) in all Si and Ge nanostructures including quantum wells (QWs), wires (Q-wires) and dots (QDs). Within the limits of strong, medium, and weak QC, valence and conduction band edge energy levels (VBM and CBM) were calculated as a function of QD diameters, QW thicknesses and Q-wire diameters. Crystalline and amorphous quantum systems were considered separately. Calculated band edge levels with strong, medium and weak QC models were compared with experimental VBM and CBM reported from X-ray photoemission spectroscopy (XPS), X-ray absorption spectroscopy (XAS) or photoluminescence (PL). Experimentally, the dimensions of the nanostructures were determined directly, by transmission electron microscopy (TEM), or indirectly, by x-ray diffraction (XRD) or by XPS. We found that crystalline materials are best described by a medium confinement model, while amorphous materials exhibit strong confinement regardless of the dimensionality of the system. Our results indicate that spatial delocalization of the hole in amorphous versus crystalline nanostructures is the important parameter determining the magnitude of the band gap expansion, or the strength of the quantum confinement. In addition, the effective masses of the electron and hole are discussed as a function of crystallinity and spatial confinement.

show abstract

Section: Quantum Wiresmentioning

confidence: 99%

Quantum confinement in Si and Ge nanostructures

Barbagiovanni

Lockwood

Simpson

et al. 2012

Journal of Applied Physics

178

163

View full text Add to dashboard Cite

show abstract

“…H.S. Seo, et al [25] fabricated SiNWs whose shape were precise control and conical arrays by electrochemical etching, and found that the concentration of electrolyte, etching time, etching temperature and current density were the important factors affect the micro-structure which fabricated by electrochemical etching. The diameter and length of the SiNWs could be controlled by adjusting the current density.…”

Section: Chemical Etchingmentioning

confidence: 99%

Research Survey on Synthesis Methods of Silicon Nanowires

Zheng

Yan²,

Wang³

2011

AMR

View full text Add to dashboard Cite

Silicon nanowires (SiNWs) are new one-dimensional material with unique properties, which have been widely used in field-effect devices, nano-sensors and other nano-electronic devices. In this paper, the new progress in research on the synthesis methods of SiNWs is summarized. The influencing factors and characteristics of each synthesis method are discussed. Finally, a new method is put forward which based on the advantages both on thermal evaporation and template method, and this method can synthesize SiNWs arrays with uniform diameter, high-order, high-purity and with high-yield. This method will be a new research orientation in the future.

show abstract

“…Silicon pillar arrays with high aspect ratio have potential applications in microelectronic devices, such as field emitter arrays and solar cells [1][2][3][4][5][6][7][8]. Wet electrochemical etching is a simple and low-cost way on the fabrication of high aspect ratio silicon micro and macro structure arrays with high productivity and fine surface quality [9][10][11][12][13][14]. It is foremost to choose suitable silicon material, because the etching structure could be significantly different due to different silicon type and orientation.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of P(100) Silicon Macro-pore and Pillar Array by Wet Electrochemical Etching

Shao

Wang

et al. 2022

J. Micromech. Microeng.

View full text Add to dashboard Cite

In this paper, pyramidal notch array was pre-etched on P(100) silicon wafer using anisotropic wet chemical etching, then macro-pore/pillar array were successfully processed in the pyramidal notch array by an anodic electrochemical etching. The formation mechanism of macro-pore and pillar in pyramidal notch were investigated, it indicates that the silicon dissolution rate is proportional to electric field, while electric field is mainly concentrated on the tip, edges and corners of the pyramidal notch. Therefore, there is an etching rate difference between the notch corner and planar regions in the pyramid notch. The notch corners are preferentially etched at first, then a pore is formed in the notch. If the shape of the open window is truncated and the bottom size is large enough, four pores would initiate at the notch angels due to etching rate difference between the truncated pyramidal notch corner and notch center, consequently, a pillar is formed in the notch center.

show abstract

Fabrication of precisely controlled silicon wire and cone arrays by electrochemical etching

Cited by 19 publications

References 18 publications

Quantum confinement in Si and Ge nanostructures

Quantum confinement in Si and Ge nanostructures

Research Survey on Synthesis Methods of Silicon Nanowires

Fabrication of P(100) Silicon Macro-pore and Pillar Array by Wet Electrochemical Etching

Contact Info

Product

Resources

About