Fabrication of porous silicon-based optical sensors using metal-assisted chemical etching

Balderas‐Valadez, Ruth Fabiola; Agarwal, Vivechana; Pacholski, Claudia

doi:10.1039/c5ra26816h

Cited by 33 publications

(22 citation statements)

References 23 publications

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“…In 1956, Uhlirs first observed the formation of PSi during electrochemical procedures for polishing of silicon and germanium wafers [ 14 ]. This methodology is advantageous to other fabrication techniques (i.e., metal-assisted chemical etching [ 47 , 48 ], etc. ), since it allows us to obtain different photonic structures with a high reproducibility [ 49 ].…”

Section: Psi: From Fabrication To the Bioconjugationmentioning

confidence: 99%

Porous Silicon Optical Devices: Recent Advances in Biosensing Applications

Moretta

Stefano

Terracciano

et al. 2021

Sensors

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This review summarizes the leading advancements in porous silicon (PSi) optical-biosensors, achieved over the past five years. The cost-effective fabrication process, the high internal surface area, the tunable pore size, and the photonic properties made the PSi an appealing transducing substrate for biosensing purposes, with applications in different research fields. Different optical PSi biosensors are reviewed and classified into four classes, based on the different biorecognition elements immobilized on the surface of the transducing material. The PL signal modulation and the effective refractive index changes of the porous matrix are the main optical transduction mechanisms discussed herein. The approaches that are commonly employed to chemically stabilize and functionalize the PSi surface are described.

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Section: Psi: From Fabrication To the Bioconjugationmentioning

confidence: 99%

Porous Silicon Optical Devices: Recent Advances in Biosensing Applications

Moretta

Stefano

Terracciano

et al. 2021

Sensors

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“…Каталітичне хімічне травлення (MacEtch)один з анізотропних методів отримання кремнієвих наноструктур різної морфології, зокрема, поруватого кремнію [1][2][3][4], нанониток та комплексних наноструктур [5][6][7][8][9][10]. На їх основі створюють сучасні прилади наноелектроніки [11], оптоелектроніки [12][13][14][15], пристрої пере-творення і накопичення енергії [16][17][18][19].…”

Section: аналіз джерел інформаціїunclassified

Influence of Galvanic Replacement Conditions in Dmso Solutions on the Sizes of Gold Nanoparticles, Fixed on the Surface of Silicon

Shepida¹

2019

CTAS

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Наведено результати досліджень залежності розмірів наночастинок золота, осаджених на поверхні кремнію, від умов гальванічного заміщення (складу розчину, температури та тривалості процесу) у середовищі ДМСО. Показано, що за концентрації 2-8 m М H [AuCl 4 ] формуються сферичні наночастинки металу з доброю адгезією до підкладки. Встановлено, що фіксовані наночастинки золота проявляють високу каталітичну активність для металкаталітичного хімічного травлення кремнію з утворенням його наноструктур. Ключові слова: золото, ДМСО, кремній, гальванічне заміщення, метал-каталітичне хімічне травлення.

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“…This oxide layer protects the nanowires from further oxidation due to contact with environmental molecules, including atmospheric gases and water under normal environmental conditions [13,14]. The properties of light interference in the layers of Si NWs shown can be used to detect protein A and sucrose [15]. In addition, the binding of various viruses to porous silicon nanoparticles has been shown, which can be caused by Van der Waals interactions arising between the huge porous surface of nanoparticles and virions [16].…”

Section: Introductionmentioning

confidence: 99%

H1N1 influenza virus interaction with a porous layer of silicon nanowires

Gonchar

Agafilushkina

Moiseev

et al. 2020

Mater. Res. Express

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Here, the non-specific interaction of the H1N1 influenza virus with a porous layer of silicon nanowires (PSi NWs) was studied by transmission and scanning electron microscopy (TEM, SEM, respectively) and optical spectroscopy. PSi NW layer with a thickness of about 200 nm was fabricated by metalassisted chemical etching of p-type highly doped crystalline silicon wafers, and consist of porous nanowires with a diameter of 50-200 nm, and a distance between the nanowires of 100-200 nm. It was shown that during the adsorption of viruses, viral particles with a diameter of about 100 nm bind to the porous surface of the nanowires. This interaction was revealed using TEM, SEM, and causes wavelength shifts in the Fabry-Perot fringes in the reflection spectrum of visible light from the PSi NW layer. The results show that thin layers of PSi NWs are a promising nanomaterial for creating filters and sensors for binding and detection of viruses.

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Fabrication of porous silicon-based optical sensors using metal-assisted chemical etching

Cited by 33 publications

References 23 publications

Porous Silicon Optical Devices: Recent Advances in Biosensing Applications

Porous Silicon Optical Devices: Recent Advances in Biosensing Applications

Influence of Galvanic Replacement Conditions in Dmso Solutions on the Sizes of Gold Nanoparticles, Fixed on the Surface of Silicon

H1N1 influenza virus interaction with a porous layer of silicon nanowires

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