Fabrication of plasmonic dye-sensitized solar cells using ion-implanted photoanodes

Kaur, Navdeep; Mahajan, Aman; Bhullar, Viplove; Singh, Davinder; Saxena, Vibha; Debnath, A.K.; Aswal, D. K.; Devi, D. Keerthi; Singh, Fouran; Chopra, Sundeep

doi:10.1039/c9ra02657f

Cited by 28 publications

(17 citation statements)

References 52 publications

(55 reference statements)

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“…Ion-implantation in TiO 2 has been employed in a host of applications involving optical, [5,6,239,240] magnetic, [237,238,247,248] bio-material, [170,208,[249][250][251] and plasmonic sensing. [35,98,180,200] Furthermore, the optical domain is predominantly for the photo-catalytic, [6,58,226,[252][253][254] water splitting, [2,3,36,38,240] and photo-voltaic [35,180,200,[255][256][257][258][259] applications.…”

Section: Optical Applications Of Ion-implantation In Tiomentioning

confidence: 99%

“…The surface work function (φ) is found to decrease upon Au and Ag embedment, demonstrating an increase in the E F owing to the formation of Schottky barriers. [179,180,200] The value of R s increases slightly for both Au and Ag-implanted DSSCs, owing to a supplementary resistance accessible by the Schottky barriers at the Au-TiO 2 and Ag-TiO 2 interfaces. In addition, the R s quantity exhibits a constant enhancement with increasing Au ion dose, due to the formation of greater number of Schottky barriers.…”

Section: Photo-electric Propertiesmentioning

confidence: 99%

“…[ 53,72 ] In a mono‐noble metal doped plasmonic dye solar cell, the LSPR has an excellent coverage with a minimum of a singular absorption peak of the N719 dye molecules, resulting in broadband solar light absorption. [ 177,180,200 ] Lim et al have uniformly distributed Ag NPs on TiO 2 for DSSC application and the SPR effect in the metal/semiconductor composite has enhanced the optical properties in the 400–500 nm spectral region. [ 177 ] The Ag@TiO 2 photo‐anode based DSSCs have demonstrated enhanced solar cell efficiency (4.86%) when compared to the bare TiO 2 photo‐anode (2.57%).…”

Section: Plasmon Dye Sensitized Solar Cellmentioning

confidence: 99%

mentioning

confidence: 99%

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Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

Vemula

Raavi

2022

Adv Materials Inter

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The metal‐oxide semiconductors exhibit remarkable optoelectronic properties and have immense implication in applications involving energy conversion, light emission, environmental remediation, etc. The presence of metal nanostructures in titanium dioxide (TiO2), zinc oxide metal‐oxide semiconductors have enhanced the photo‐activity, due to the plasmon resonances and are predominantly researched for organic and perovskite photovoltaics. Generally, the metal nanoparticle dopants are introduced by methods like sputtering, sol–gel, etc. However, compared with conventional doping methods, ion‐implantation technique is a purely physical process, and a high controllability and repeatability can be achieved. Here, the current status of synthesis of nanocomposites in TiO2‐based photo‐anodic applications by ion‐implantation method is reviewed, and there is no elaborate review on this topic. Finally, the future prospects of ion‐implantation technique for controlling the excitonic behavior in TiO2 are discussed.

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Section: Optical Applications Of Ion-implantation In Tiomentioning

confidence: 99%

Section: Photo-electric Propertiesmentioning

confidence: 99%

Section: Plasmon Dye Sensitized Solar Cellmentioning

confidence: 99%

mentioning

confidence: 99%

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Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

Vemula

Raavi

2022

Adv Materials Inter

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“…Several successful reports of incorporating metal nanoparticle directly in the active layer of DSSC have been published. However, the concern about corrosion of metal nanoparticles when they come in contact with dye and electrolyte molecules is still at its infant [23]. Moreover, these metal nanoparticles are oxidized by surrounding environment.…”

Section: Introductionmentioning

confidence: 99%

Optical absorption modeling of bilayer photoanode based on Cu@TiO2 plasmonic dye sensitized solar cells towards photovoltaic applications

et al. 2021

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A periodic array of core-shell Cu@TiO 2 nanoparticle for plasmonic dye sensitized solar cells (DSSCs) in the wavelength range between 350-750 nm was studied. The size of copper nanospheres was 70 nm while the length and diameter of the copper nanorods were 100 and 10 nm, respectively. The UV-Visible absorption spectrum showed that the photo-anode based copper added TiO 2 has 29.3% absorption capability compared with copper-free TiO 2 . TiO 2 with shell thickness of 5 nm coated copper exhibited the absorption e ciency of 71.9%, while short circuit current density of 17.52 mA cm − 2 for Ci@TiO 2 photoanode. This was attributed to a strong localized electric eld around ultra-thin TiO 2 -coated copper nanospheres. The UV-Visible results of different geometries indicated that the spherical-shaped Cu@TiO 2 nanoparticles induced the high absorption capability of 3.4% compared to rod-shaped Cu@TiO 2 nanoparticles. The hybrid nanorods/nanospheres bilayer photo-anode showed the high optical UV-Visible absorption of 11.42% as compared with nanospheres/nanorods, ascribed to the large surface area for dye-loading excellent light scattering.

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Ion Implantation‐Induced Bandgap Modifications in the ALD TiO₂ Thin Films

Afzal,

Usman,

Siddiqui

et al. 2024

Physica Status Solidi (a)

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Atomic layer deposited (ALD) TiO2 layers are implanted with N, O, and Ar ions to reduce the bandgap, thereby increasing its absorbance in the visible region. The implantation is accomplished with 40 keV nitrogen, 45 keV oxygen, and 110 keV argon ions in the fluence range 1 × 1015 to 5.6 × 1016 ions cm−2. The energy of each incident ion is tuned using stopping and range of ions in matter (SRIM) to produce defects around the same projected range. The structural analysis of the as‐deposited film is performed through X‐ray diffraction (XRD), scanning electron microscopy (SEM), Rutherford backscattering (RBS), and time of flight elastic recoil detection analysis (ToF‐ERDA). The implanted layers are characterized using diffuse reflectance spectroscopy (DRS) and Fourier transform infrared spectroscopy (FTIR) to study the optical and vibrational properties of the films. The results demonstrate that nitrogen implantation in TiO2 reduces the reflectance from 43.52% to 26.31% and bandgap from 2.68 to 2.61 eV, making it a promising bandgap‐engineered material for capping layers in solar cell applications. The refractive index of the 40 keV nitrogen ion implanted film at 1 × 1016 ions cm−2 (N‐16) increases from ≈2.8 to ≈2.95. OPAL2 solar cell simulations show that the N‐16 implanted TiO2 anti‐reflective coatings (ARC) can enhance the absorbed photocurrent by 7.3%.

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Fabrication of plasmonic dye-sensitized solar cells using ion-implanted photoanodes

Abstract: Ion implantation technique can resolve the stability issue of metal nanoparticles with liquid iodine-based electrolyte to improve PCE of plasmonic dye-sensitized solar cells.

Cited by 28 publications

References 52 publications

Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

Optical absorption modeling of bilayer photoanode based on Cu@TiO2 plasmonic dye sensitized solar cells towards photovoltaic applications

Ion Implantation‐Induced Bandgap Modifications in the ALD TiO₂ Thin Films

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Fabrication of plasmonic dye-sensitized solar cells using ion-implanted photoanodes

Abstract: Ion implantation technique can resolve the stability issue of metal nanoparticles with liquid iodine-based electrolyte to improve PCE of plasmonic dye-sensitized solar cells.

Cited by 28 publications

References 52 publications

Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

Optical absorption modeling of bilayer photoanode based on Cu@TiO2 plasmonic dye sensitized solar cells towards photovoltaic applications

Ion Implantation‐Induced Bandgap Modifications in the ALD TiO2 Thin Films

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Ion Implantation‐Induced Bandgap Modifications in the ALD TiO₂ Thin Films