Fabrication of piezoelectric Al0.3Ga0.7As microstructures

Kumar, Pradip; Li, Lihua; Calhoun, L.C.; Boudreaux, Paul; DeVoe, Don L.

doi:10.1016/j.sna.2004.04.002

Cited by 12 publications

(11 citation statements)

References 40 publications

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“…5 were fabricated with varying geometries using a modified version of a previously reported Al Ga As micromachining process [16]. In this process, a 1-m-thick sacrificial Al Ga As layer is first grown on a (100) GaAs wafer by molecular beam epitaxy.…”

Section: A Fabrication Processmentioning

confidence: 99%

“…With the exception of AlN, the use of the piezoelectric effect in III-V materials has not been widely used in MEMS devices. Recently, a fabrication process [16] for realizing bending-mode [17] and longitudinal-mode [15] resonators based on single-crystal piezoelectric Al Ga As combined with Si-doped Al Ga As electrodes has been reported by our group. The lattice-matched single-crystal heterostructure essentially eliminates residual stress-induced curvature.…”

Section: Introductionmentioning

confidence: 99%

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Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films

Deng

Kumar

et al. 2007

J. Microelectromech. Syst.

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A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0 3 Ga 0 7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wavelength of the desired resonance frequency. The resonators are designed with supports which emulate free-free boundary conditions. Prototype resonators are fabricated using a three-layer Al 0 3 Ga 0 7 As heterostructure containing silicon-doped electrodes and an undoped piezoelectric Al 0 3 Ga 0 7 As layer. Quality factors as high as 11 200 are measured in air for a 23.25 MHz fundamental resonant mode, with a corresponding motional resistance of 1.67 k. A finite-element model for the resonator design is also described. Simulation results agree well with both theoretical calculations and experimental data.[ 2006-0008]Index Terms-AlGaAs, piezoelectric resonator, radio-frequency (RF) microelectromechanical systems (MEMS).

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Section: A Fabrication Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films

Deng

Kumar

et al. 2007

J. Microelectromech. Syst.

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“…In a second type of microresonators that is studied, aluminum gallium arsenide (AlGaAs) is used for the piezoelectric layer [15]. For this style of resonator, the two electrode layers are produced by doping AlGaAs with silicon (AlGaAs:Si).…”

Section: Piezoelectric Microresonatorsmentioning

confidence: 99%

“…An example of this data is displayed in figure 10. Rearranging (15) to solve for the piezoelectric coefficient, d 31 , reveals a term that directly corresponds to the slope of the data points. Because this term consists of two temporal functions, it is important to note that the slope of the data points represents the ratio of the amplitudes of the two harmonic functions and a negative sign must be included to account for the phase difference.…”

Section: Modal Force and Piezoelectric Coefficientmentioning

confidence: 99%

Parametric identification of piezoelectric microscale resonators

Dick

Balachandran

DeVoe

et al. 2006

J. Micromech. Microeng.

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Piezoelectrically actuated microscale resonators [1] are attractive for communication and signal processing applications. An example of a typical resonator studied in this work is shown in Figure 1. As pointed out in recent work [2]-[4], these resonators exhibit nonlinear characteristics, some of which may possibly be explained as oscillations about a non-flat equilibrium position that is caused due to buckling. The intent of the present work is to develop a model for this resonator from an experimental standpoint. To this end, the Düffing oscillator model is picked as a first prototype and parameters in this model are identified for various microscale oscillators. The basis for the parametric identification scheme is obtained from the work of Nayfeh and Balachandran [5].

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“…As a result, a bending moment occurs at the cantilever beam when the carbon-doped layer is strained by the piezoelectric effect. 28) Figure 1(b) shows the point-by-point correction-secondary ion mass spectrometry (PCOR-SIMS SM ) profile of the sample. We used carbon for growing a highly resistive layer.…”

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confidence: 99%

Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

Yamada

Ando

Watanabe

et al. 2021

Appl. Phys. Express

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Photo-electrochemical (PEC) etching is a promising technique for fabricating GaN microelectromechanical systems devices. In this study, we demonstrate the fabrication of GaN cantilevers by the bandgap-selective PEC etching of an InGaN superlattice sacrificial layer. By using an InGaN superlattice as a sacrifice layer, we found the PEC etching rate became higher than using a normal InGaN layer. As a result, the InGaN superlattice was completely etched and we fabricated GaN-based cantilevers whose resonance characteristics were measured. The Young’s modulus of GaN was determined from the resonance characteristics of GaN cantilevers to be the same as the highest value reported previously.

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Fabrication of piezoelectric Al0.3Ga0.7As microstructures

Cited by 12 publications

References 40 publications

Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films

Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films

Parametric identification of piezoelectric microscale resonators

Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

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