Fabrication of patterned flexible graphene devices via facile direct transfer of as-grown bi-layer graphene

Park, Heun; Kim, Kyung Hoon; Yoon, Jong Hyun; Kim, Kuk Ki; Park, Seung Min; Ha, Jeong Sook

doi:10.1016/j.apsusc.2014.12.003

Cited by 9 publications

(3 citation statements)

References 38 publications

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“…From an experimental point of view, the control of graphene properties for different applications and for the integration of the materials in the devices often requires the patterning of the material so that it conforms to specific dimensions and geometries [6]. This is the case of the preparation of transistors [7] [8] or transparent electrodes [9] [10].…”

Section: Introductionmentioning

confidence: 99%

Graphene patterning by nanosecond laser ablation: the effect of the substrate interaction with graphene

Pérez-Mas

Álvarez

Campos³

et al. 2016

J. Phys. D: Appl. Phys.

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This paper focuses on the development of patterned graphene/substrate by means of green nanosecond pulse laser irradiation. Monolayer graphene samples supported on a Si/SiO 2 substrate were patterned using 532 nm laser irradiation under fluence conditions ranging from 31 mJ/cm 2 and to 4240 mJ/cm 2. Raman spectroscopy was used to investigate the effect of laser irradiation on the graphene. It was found that at 356 mJ/cm 2 selective ablation of the graphene occurs. However, at fluence values above 1030 mJ/cm 2 (when damage to the substrate is observed) no ablation of the graphene takes place. In contrast, its graphenic structure was found to have been modified. Only at fluence values where the ablation of the substrate occurs, is graphene eliminated in an area almost equivalent to that of the ablated substrate. In this case, additional damage to the graphene sheet edges is produced. The increment in the number of oxygenated functional groups in these regions, as measured by XPS spectroscopy, suggests that this damage is probably caused by thermal phenomena during the ablation of the substrate.

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Section: Introductionmentioning

confidence: 99%

Graphene patterning by nanosecond laser ablation: the effect of the substrate interaction with graphene

Pérez-Mas

Álvarez

Campos³

et al. 2016

J. Phys. D: Appl. Phys.

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“…So far, several methods have been developed for patterning graphene into desired structures, including photolithography [14], electron beam lithography [15], plasma etching [16], laser direct patterning [17][18][19] and catalytic hydrogenation [20]. However, these patterning methods have inherent limitations like multiple processing steps, low throughput, requiring harsh conditions or suffering from photoresist contamination of the graphene surface etc, restricting the development of graphene electronics.…”

Section: Introductionmentioning

confidence: 99%

Phase shifting mask modulated laser patterning on graphene

Gao

Liu

et al. 2016

Nanotechnology

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A one-step graphene patterning method is developed in this paper. A phase shifting mask is used to modulate incident laser beam spatially and generate graphene patterns by laser heating. Periodic graphene nanoribbon and nanomesh structures are fabricated by employing 1D and 2D phase shifting masks, respectively. The noncontact, simple procedure, easy handling and economic properties of this method make it promising towards graphene-based device fabrication.

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“…Recently there have been several attempts to develop direct patterning methods, which can minimize or eliminate the problems inherent to conventional patterning. 9,10) Here, we utilized the atomic force microscopy (AFM)-based lithography technique, oxidation scanning probe lithography (o-SPL), [11][12][13][14] that enables nanometer resolution patterns in the atmospheric environment and eliminates several fabrication steps required in the conventional lithography method.…”

mentioning

confidence: 99%

Facile fabrication for a stable interface in 2D materials/graphene van der Waals heterostructure

Du¹,

Kim²,

Kim³

et al. 2021

Appl. Phys. Express

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In order to fully utilize the excellent electrical properties of graphene as an electrode, it is essential to preserve the nature of pristine graphene. However, structural defects or polymer residues during the conventional fabrication steps are inevitable, severely limiting device performance. To overcome these issues, we used a seamless lateral graphene–graphene oxide (GO)-graphene layer fabricated by oxidation scanning probe lithography as electrodes of the MoS2 field-effect transistor. We demonstrated residue-free and flawless graphene surfaces and furthermore GO interlayer between the MoS2 and gate dielectric reduces interface roughness and screens interface traps, leading to improved electron injection and carrier mobility.

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Fabrication of patterned flexible graphene devices via facile direct transfer of as-grown bi-layer graphene

Cited by 9 publications

References 38 publications

Graphene patterning by nanosecond laser ablation: the effect of the substrate interaction with graphene

Graphene patterning by nanosecond laser ablation: the effect of the substrate interaction with graphene

Phase shifting mask modulated laser patterning on graphene

Facile fabrication for a stable interface in 2D materials/graphene van der Waals heterostructure

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