Fabrication of p-ZnO:Na/n-ZnO:Na homojunction by surface pulsed laser irradiation

Abstract

An ingenious method of preparation of ZnO homojunctions for on-chip integration purposes is proposed, by local multiple pulse laser irradiating (MPLI) ZnO:Na film (NZO). The importance of this method lies in realization of p-and n-ZnO using only one kind of dopant (Na element) with a single layer of NZO film.The p-NZO as prepared by pulsed laser deposition (PLD) easily changes to n type after a couple of hours. However, more than $150 times MPLI with laser fluence of 60 mJ cm À2 can be used to efficiently control the Na dopants to occupy the substitutional (NaZn) sites to realize a more stable p-NZO. The low temperature (6 K) PL spectra of the p-NZO at excitation power of 6 mW and the first principle calculation show that the acceptor energy level is $161 meV. The current-voltage (I-V) curve of the p-n NZO homojunction fabricated by local MPLI shows good rectifying behavior, with turn on voltage at $2.47 V under forward bias voltage and reverse breakdown voltage bias $11.22 V. This convenient p-n junction technique could be used to simplify and improve controllability and accuracy of fabrication of microchip electronic devices.

ZnO with p-Type Doping: Recent Approaches and Applications

“…The p-ZnO:Na nanorods/ZnO/n-Si structure showed a rectifying behavior. Yang et al . fabricated a p-ZnO:Na/n-ZnO:Na homojunction by surface pulsed laser irradiation.…”

“…The p-ZnO:Na nanorods/ZnO/n-Si structure showed a rectifying behavior. Yang et al 15 fabricated a p-ZnO:Na/n-ZnO:Na homojunction by surface pulsed laser irradiation. Under the action of the laser, Na atoms tend to be located in the substitution position (Na Zn ), realizing the conversion from n-ZnO:Na to p-ZnO:Na.…”

Improving Long‐Term Stability of Kesterite Thin‐Film Solar Cells with Oxide/Metal/Oxide Multilayered Transparent Conducting Electrodes

“…[54][55][56][57] This Ag-doped ZnO layer in OMO TCEs can act as a passivation layer in the CZTSSe device due to higher positions of conduction and valence bands compared with ZnO, AZO, GZO, and MZO, respectively. [58][59][60][61][62][63] Therefore, we investigated the formation of Ag-doped ZnO at the Ag and oxide interfaces along with the band alignment for CZTSSe TFSCs with OMO and conventional AZO TCEs by high-resolution X-ray photoelectron spectroscopy (XPS) characterizations. Supporting Information.…”

54‐4: Intense Pulsed Light Annealed ZnO for the Production of High Efficiency Inverted QLEDs

“…Since the rate of thermal curing process (drying/sintering/annealing) generally increase exponentially with temperature, this process allows materials to be dried much more rapidly (< 2 ms) than with a conventional oven. Furthermore, it enables the creation of new materials, surfaces, morphologies and structural modifications, creating material set which are not feasible with the thermal methods [2][3][4][5][6][7][8][9][10]. However, its potential application in other areas where rapid drying/annealing (100 µs -10 ms) can be applied with beneficial surface effects (physical/chemical/ morphological) is still being explored in metal oxide semiconductor devices, photovoltaics, printed electronics, flexible electronics [6][7][8][9][10].…”