2022
DOI: 10.1016/j.jeurceramsoc.2022.02.058
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Fabrication of novel AlN-SiC-C refractories by nitrogen gas-pressure sintering of Al4SiC4

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Cited by 21 publications
(16 citation statements)
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“…Al 2 O 3 and AlN diffraction peaks appeared after thermal treatment at 1600 • C. The nitridation process is strongly dependent on atmosphere, pressures, temperature, and time. 5,15,16,28 Compare to the pressureless nitridation of Al 4 O 4 C, 28 the results indicate that GPS authentically promote the nitridation process. When the temperature rose to 1700 XPS was carried out to certify the combination of valence bonds of the specimen heated at 1700 • C. Figure 2A shows the specimen contained Al, O, C, and N elements after nitridation.…”
Section: Phase Compositionmentioning
confidence: 80%
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“…Al 2 O 3 and AlN diffraction peaks appeared after thermal treatment at 1600 • C. The nitridation process is strongly dependent on atmosphere, pressures, temperature, and time. 5,15,16,28 Compare to the pressureless nitridation of Al 4 O 4 C, 28 the results indicate that GPS authentically promote the nitridation process. When the temperature rose to 1700 XPS was carried out to certify the combination of valence bonds of the specimen heated at 1700 • C. Figure 2A shows the specimen contained Al, O, C, and N elements after nitridation.…”
Section: Phase Compositionmentioning
confidence: 80%
“…21,28 However, the high nitrogen pressure (20 atm) is essential for effective nitridation because faster diffusion of the nitrogen molecules could be achieved. 5 And the Al vapor generated in the matrix of Al 4 O 4 C specimen could react with N 2 before the dense nitride layers were completed. In addition, according to Fick's first law and classical collision theory, 44,45 the increase of nitrogen pressure in the constant volume of system can promote the diffusion flux and the diffusion rate of nitrogen.…”
Section: Reaction Mechanismmentioning
confidence: 99%
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