Fabrication of nanostructures on Si(1 0 0) and GaAs(1 0 0) by local anodic oxidation

Červenka, Jiří; Kalousek, Radek; Bartošík, Miroslav; Škoda, David; Tomanec, Ondřej; Šikola, Tomáš

doi:10.1016/j.apsusc.2006.03.095

Cited by 28 publications

(16 citation statements)

References 9 publications

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“…In the local-anodic-oxidation (LAO) process [18], oxides grow on a chemically reactive substrate by the application of a voltage between a conductive AFM tip and a substrate surface, which acts as an anode. There is a threshold voltage at which the anodic oxidation starts [20].…”

Section: Contributed Articlementioning

confidence: 99%

“…Chen et al [16] have been applied a combination of atomic force microscopy nanoscratching on a single-layer resist and liftoff process to fabricate metal nanowires. The AFM anodization lithography also has been used for fabrication a nanometre-scale high aspect ratio patterns of various nanoscaled devices [17], as well as fabrication of nanostructures on Si and GaAs substrate by local anodic oxidation using AFM contact mode [18]. This paper presents fabrication and I-V characterization of silicon oxide nanodot by AFM lithography and conductive AFM mode.…”

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confidence: 98%

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On dot and out of dot electrical characteristics of silicon oxide nanodots patterned by scanning probe lithography

Hutagalung

Darsono

2009

Phys. Status Solidi (c)

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Silicon oxide nanodot arrays were grown on pre‐cleaned silicon (100) substrate by scanning probe nanolithography. In this study, a conductive AFM was used to fabricate nanoscale oxide dots in humidity controlled environment. The AFM is equipped with a nanotechnology software package providing the control of tip‐sample voltage and tip motion according to pre‐designed patterns. The surface topography and size of obtained patterns (diameter and height) were investigated by a noncontact AFM mode. A series of five silicon oxide nanodot array with diameter in the range of 146.05‐247.65 nm and height 2.14‐4.87 nm had been successfully fabricated. Meanwhile, a contact AFM mode was used to investigate the localized I‐V characteristics on the dots and out of dot position. It was found, the on dot characteristics are highly nonohmic due to potential barrier interface between silicon oxide and silicon substrate. However, the out of dot characteristic is linear indicates an ohmic contact between AFM tip and sample. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributed Articlementioning

confidence: 99%

mentioning

confidence: 98%

On dot and out of dot electrical characteristics of silicon oxide nanodots patterned by scanning probe lithography

Hutagalung

Darsono

2009

Phys. Status Solidi (c)

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“…For instance, the influence of operational parameters on local oxidation, such as tip-sample voltage, tip writing speed, and tip load force, has been already studied using contact and noncontact modes of atomic force microscope ͑AFM͒. 5,6 LAO depends on an ionic current between the tip and the sample surface going through a water bridge between the tip and the surface. The size and shape of this bridge depends on the amount of the water condensed both on the surface and between the tip and the surface.…”

Section: Introductionmentioning

confidence: 99%

Role of humidity in local anodic oxidation: A study of water condensation and electric field distribution

et al. 2009

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This paper deals with the analysis of the influence of humidity on the process of local anodic oxidation carried out by atomic force microscope ͑AFM͒ on GaAs ͑100͒ surfaces. Recent experiments have shown that the height and half width of oxide nanolines do not increase monotonously with relative humidity, but for lower relative humidities ͑Ͻ50%͒ the lines comparable in size to those prepared at 90% were obtained. However, their height and width along the lines revealed significant variations. To better understand these phenomena, the AFM force-distance spectroscopy measurements together with computer simulations of an electric-field distribution and water bridge formation between the tip and the substrate at different relative humidities were carried out. Our experiments on AFM force-distance spectroscopy have not proved an enhanced water condensation between the tip and the surface at lower humidities. However, the simulations of the electric field in the vicinity of the tip at the early stages of the oxidation process at low relative humidities showed an increase in the average intensity in the oxide layer promoting the diffusion of oxidizing species toward the substrate and, hence, the formation of oxide lines under these conditions. Finally, our simulations on water bridge variations along the tip track showed that at lower humidities there are higher relative standard deviations in the size of the water bridge while the tip is being moved along the surface. This indicates why the oxide lines showed a bigger variability in size.

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“…This process is an electrochemical process which sample surface serves as an anode, AFM probe tip acts as a cathode and water molecules serve as electrolytes to the oxidation process [4], [5]- [6]. Under a controlled humidity, water molecules absorbed on substrate surface and AFM probe tip and water layer thickness depends on the relative humidity introduced to the air in the sealed environment [7].…”

Section: Introductionmentioning

confidence: 99%

Submicron Wire Fabrication on Silicon Substrate Based on Atomic Force Microscopy Technique

Asmah¹,

Hutagalung²,

Sidek³

2013

J. Phys.: Conf. Ser.

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Abstract. This article presents on a simple sub-micron wire fabrication by means of local anodic oxidation atomic force microscopy technique. The silicon-based structure consists of two adjacent terminals serve as probing pads and connected with a wire width less than 200 nm. The pad dimension and wire length are 49 µm 2 and 11 µm each, respectively. The fabrication process is conducted at room temperature 24 -27 °C with 50 -60 % relative humidity and operated by commercial atomic force microscopy without any modification done. Furthermore, the local oxidation is performed using gold coated AFM probe tip and assisted by the used of special language supported by the equipment software. In addition, 9.0 V applied voltage with 2 µm / sec writing speed is used to realize the oxidation process. I-V characteristic of bare device shows there is a current flow through the device when a range of voltage is applied. By using this local anodic oxidation technique, the silicon wire-based structure is fabricated and used as gas sensor sensing part. The silicon device demonstrates an increase in resistance as introduced to gas environment. The silicon wire device shows relative sensitivity of 35 % to the oxygen gas.

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Fabrication of nanostructures on Si(1 0 0) and GaAs(1 0 0) by local anodic oxidation

Cited by 28 publications

References 9 publications

On dot and out of dot electrical characteristics of silicon oxide nanodots patterned by scanning probe lithography

On dot and out of dot electrical characteristics of silicon oxide nanodots patterned by scanning probe lithography

Role of humidity in local anodic oxidation: A study of water condensation and electric field distribution

Submicron Wire Fabrication on Silicon Substrate Based on Atomic Force Microscopy Technique

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