Fabrication of multilayer single-electron tunneling devices

Visscher, E. H.; Verbrugh, S. M.; Lindeman, J.; Hadley, P.; Mooij, J. E.

doi:10.1063/1.113526

Cited by 69 publications

(43 citation statements)

References 5 publications

(5 reference statements)

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“…However, in the devices fabricated with a stacked design the islands are partly [78,79,80] or entirely [79,80] screened from the substrate by an underneath gate or by an underneath counter electrode. Such devices exhibit considerably less noise, down to the lowest value measured so far, 2.5 × 10 −5 e/ √ Hz at 10 Hz [79,80].…”

Section: Background Chargesmentioning

confidence: 99%

Towards Single-Electron Metrology

Flensberg

Odintsov

Liefrink

et al. 1999

Int. J. Mod. Phys. B

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We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed in the context of other standards. The operation principles of single electron transistors, turnstiles and pumps are explained and the fundamental limits of these devices are discussed in detail. We describe the various physical mechanisms that influence the device uncertainty and review the analytical and numerical methods needed to calculate the intrinsic uncertainty and to optimise the fabrication and operation parameters. Recent experimental results are evaluated and compared with theoretical predictions. Although there are discrepancies between theory and experiments, the intrinsic uncertainty is already small enough to start preparing for the first SET-based metrological applications. DFM-98-R27Towards single-electron metrology 2

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Section: Background Chargesmentioning

confidence: 99%

Towards Single-Electron Metrology

Flensberg

Odintsov

Liefrink

et al. 1999

Int. J. Mod. Phys. B

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“…1(a) using a multilayer process [13]. First, one array was fabricated, together with the two gate electrodes, using standard electron beam lithography and shadowevaporation techniques.…”

Section: (Received 23 May 1996)mentioning

confidence: 99%

Electron-Hole Transport in Capacitively Coupled 1D Arrays of Small Tunnel Junctions

1997

Self Cite

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We have measured the current-voltage characteristics of two capacitively coupled 1D arrays of small tunnel junctions, where the coupling capacitance is significantly larger than the junction capacitance. We voltage biased only one of the arrays, while the current was measured simultaneously in both arrays. We find that, at low bias voltages, the currents in the two arrays are comparable in magnitude but opposite in direction. The currents are carried by tunneling electron-hole pairs that are bound by the charging energy of the coupling capacitance. [S0031-9007 (97) Several experiments have demonstrated that the Coulomb interaction of the electrons plays an important role in systems of small tunnel junctions. The significant charging energy prohibits electron tunneling below a certain threshold voltage. The charging energy reveals the discrete nature of the electron charge in these systems [1][2][3]. In 1D arrays of small tunnel junctions, the Coulomb interaction leads to transport of charge solitons through the array [4]. The soliton length depends on the ratio between the junction capacitance and the self-capacitance of the islands in between the junctions.Theoretical [5,6] and experimental [7] work on systems of small tunnel junctions has shown that electron transport in the Coulomb blockade regime is possible by electron tunneling through one or more virtual states of higher energy. This macroscopic quantum tunneling (MQT) of the charge or cotunneling is possible even at zero temperature, where charge is transferred through more than one junction in one event. It has been shown [5] that the rate of cotunneling is proportional to ͑R K ͞R͒ M , where R K h͞2e 2 is the resistance quantum, R is the junction tunnel resistance, and M is the number of junctions involved in the cotunneling event. Generally, cotunneling leads to quantum leakage of the current in single-electron tunneling devices. The quantum leakage forms a problem for devices aiming at metrological accuracy of the current [8,9].

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“…This technique only allows for production of junctions with capacitance down to Ϸ10 aF implying that operational temperatures need to be in the millikelvin range. Other materials, 7,8 fabrication techniques ͑see Ref. 2 for review also on semiconductor based junctions͒, and structures 9 are being developed.…”

Section: Introductionmentioning

confidence: 99%

Low-frequency noise in single electron tunneling transistor

Tavkhelidze

Mygind

1998

Journal of Applied Physics

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The noise in current biased aluminium single electron tunneling ͑SET͒ transistors has been investigated in the frequency range of 5 mHzϽ f Ͻ30 Hz. A refined high frequency ͑HF͒ shielding including resistive coaxial lines, that prevents spurious electromagnetic radiation and especially high energy photons emitted by the 4.2 K environment from reaching the sample, allows us to study a given background charge configuration for many hours below Ϸ100 mK. The noise at relatively high frequencies originates from internal ͑presumably thermal equilibrium͒ charge fluctuations. For f у10 Hz, we find the same input charge noise, typically Q N ϭ5ϫ10 Ϫ4 e/Hz 1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(V g ) curve ͑voltage across transistor versus gate voltage͒ strongly depends on the background charge configuration resulting from the cooling sequence and eventual radio frequency ͑rf͒ irradiation. The measured noise spectra which show both 1/f and 1/f 1/2 dependencies and saturation for f Ͻ100 mHz can be fitted by two-level fluctuators with DebyeLorentzian spectra and relaxation times of order seconds. In some cases, the positive and negative slopes of the V(V g ) curve have different overlaid noise patterns. For fixed bias on both slopes, we measure the same noise spectrum, and believe that the asymmetric noise is due to dynamic charge trapping near or inside one of the junctions induced when ramping the junction voltage. Dynamic trapping may limit the high frequency applications of the SET transistor. Also reported on are the effects of rf irradiation and the dependence of the SET transistor noise on bias voltage.

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Fabrication of multilayer single-electron tunneling devices

Cited by 69 publications

References 5 publications

Towards Single-Electron Metrology

Towards Single-Electron Metrology

Electron-Hole Transport in Capacitively Coupled 1D Arrays of Small Tunnel Junctions

Low-frequency noise in single electron tunneling transistor

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