2013
DOI: 10.7567/jjap.52.09ka06
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Fabrication of Multilayer Pb(Zr0.53Ti0.47)O3 Film Crystallized by Laser Annealing

Abstract: Crystallization of Pb(Zr0.53Ti0.47)O3 (PZT) films derived from sol–gel precursor solutions using a continuous-wave (CW) 980 nm semiconductor laser is discussed in this paper. By using a 0.3 M precursor solution and repeating 4 times a sequence of drying, pyrolysis, and laser annealing (LA) processes, 150-nm-thick PZT films with (111)-preferred texture are obtained. By adjusting the laser power according to the variation in film thickness, PZT crystallization is induced throughout the film, which is confirmed b… Show more

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Cited by 4 publications
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