“…The ink forms a patterned SAM of about 2-3 nm thickness, at these areas, which is utilized as a structure or a resist mask to selectively remove material from non-protected areas, due to the strong contrast in the etching rate between protected and unprotected areas. 38 |j.CP has been used for patterning Au, 38 Ag, 40 Cu, 41 Pd, 42 semiconductors as Si, 43 GaAs, 44 ZnSe, 45 oxides such as Si0 2 , Ti0 2 , Al 2 0 3 (either as bulk material or native oxides of Si, Ti, and Al), 46 ' 47 transparent electrically conductive materials as indium tin oxide (ITO), and indium zinc oxide (IZO). 48 Using a thin film of any of the above materials as a mask for dry or wet chemical etching, it is possible to transfer the pattern to other kinds of substrates, thus extending the field of potential applications of uCP.…”