A major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantation are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.T he ability to define patterns on the nanometre scale is a cornerstone of modern nanotechnology with applications in chemistry, biology, medicine, electronics, optics, material science and other fields. In top-down fabrication processing, patterns are produced in a resist film by commonly-used lithography methods 1 , including electron-beam lithography (EBL) 2 , optical lithography 3 and projection ion/electron beam lithography with stencil masks 4-7 . The patterns can then be transferred onto the substrate using subtractive or additive methods, such as dry etching or lift-off 8,9 . However, these lithography techniques are restricted to a certain subset of target samples, which must be flat and typically several millimetres or more in size so that a uniform resist film can be applied by spin coating 10 . Spin coating is difficult on many other types of substrates 11 , including fibre facets, thin and fragile samples, or small regions on pre-fabricated devices such as semiconductor lasers 12 and atomic force microscope (AFM) cantilevers 13 . Also, many samples have low electrical conductivity and are therefore not suitable for EBL or require the coating of additional conductive layers.Several techniques have been developed to solve the challenges in patterning some of the above-mentioned samples. Evaporated negative resists for EBL have been demonstrated to pattern optical fibres 12 and AFM cantilevers 13 . Dip coating 14 and spray coating 15 have been developed, but the difficulty of producing uniform and thin resist films present major challenges for high-resolution EBL. A focused ion beam (FIB) can be used for fabricating these samples without spin coating, but it causes extensive surface amorphization, material re-deposition, and gallium implantation [16][17][18] . Nanoimprint lithography 19,20 can also be applied to some of these unconventional substrates without spin coating [21][22][23] , which is ideal for rigid sample surfaces to avoid pattern distortion. A few other methods of pattern transfer have been explored in which metal nanostructures were transferred onto unconventional substrates by utilizing a sacrificial organic layer 24,25 ; they are mainly suited for applications that do...