2015
DOI: 10.1007/s11082-015-0286-z
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Fabrication of metal nano-wires by laser interference lithography using a tri-layer resist process

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Cited by 3 publications
(2 citation statements)
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“…SX AR-P 3500/6 (Allresist, GmbH, Strausberg, Germany) was used as the interference lithography photoresist. Dilution is required as the reflected light from the substrate affects the desired pattern, limiting the thickness of the photoresist [21]. The compositions of the diluted photoresist are SX AR-P 3500/6 positive photoresist mixed with AR 300-12 at a ratio of 1:3.5.…”
Section: Methodsmentioning
confidence: 99%
“…SX AR-P 3500/6 (Allresist, GmbH, Strausberg, Germany) was used as the interference lithography photoresist. Dilution is required as the reflected light from the substrate affects the desired pattern, limiting the thickness of the photoresist [21]. The compositions of the diluted photoresist are SX AR-P 3500/6 positive photoresist mixed with AR 300-12 at a ratio of 1:3.5.…”
Section: Methodsmentioning
confidence: 99%
“…The samples were spin coated for 30 s. After spin coating, the samples were dried in the oven at 90 °C for 20 min. Dilution for this photoresist is required, as the reflected light from the substrate affects the desired pattern, which limits the thickness of the photoresist [38].…”
Section: Methodsmentioning
confidence: 99%