Fabrication of meso- and nano-scale structures on surfaces of chalcogenide semiconductors by surface hydrodynamic interference patterning

Turning Catalysts on by Light‐Induced Stress: When Red Means Go

“…Above mentioned light induced effects, although still observable in bulk ChGs become particularly pronounced in thin films. For example light interference on structures generated by electron beam and photoinduced material flow can create complex interference patterns, in ternary chalcogenide thin films …”

“…For example light interference on structures generated by electron beam and photoinduced material flow can create complex interference patterns, in ternary chalcogenide thin films. [27] The structure of ChGs on the atomic scale is best described as a continuous random network, for which an important parameter is the mean coordination number (MCN) -the sum of the products of the individual abundance times the valency of the constituent atoms. The glass sensitivity to light can be correlated with the decrease of MCN.…”

Fabrication of information protection elements on the film As₄Se₉₆ by electron-beam lithography method

“…Однак, дослідження впливу електронного опромінення на халькогенідні плівки показали на наявність модифікації їх поверхні електронним променем [3][4][5] Зростання дози опромінення понад 9.310 4 мкКл/см 2 (t>5 мс) приводить до інверсії форми електронно індукованого рельєфу. В області доз 9.310 4 до 9.310 6 мкКл/см 2 при електронному опроміненні на поверхні плівки утворюються кратери з профілем гаусового типу.…”

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

“…BILANYCH, V.M. RIZAK, V. KOMANICKY, 2020 [4] or inversion of the shape of an electron-induced surface relief [5,6]. The binary As-Se systems have a very high sensitivity to the irradiation.…”