Fabrication of low-cost and fast-response visible photodetector based on ZnS:Mn/p-Si heterojunction

Kumar, Arun; Mukherjee, Sayak; Sharma, Himanshu; Rana, Devendra Kumar; Kumar, Arvind; Kumar, Rajiv; Choubey, Ravi Kant

doi:10.1016/j.mssp.2022.107226

Cited by 47 publications

(6 citation statements)

References 68 publications

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“…This indicates that annealing treatment has great influences on the PL properties of ZnS films. This result also indicates that ZnS films have potential applications in optical devices, schottky diodes, 31) UV sensors 32) and visible photodetectors, 33) etc.…”

Section: Resultsmentioning

confidence: 65%

Characterization of ZnS films on different substrates by pulsed laser deposition

Wang,

Xing,

Feng

et al. 2023

Jpn. J. Appl. Phys.

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ZnS films were deposited on Si and quartz substrates via pulsed laser deposition, and the structure, morphology and photoelectric characteristics of as-deposited and annealed ZnS films were compared. XRD results show that ZnS films are polycrystalline, and the intensity of peak at 28.4° on Si is larger, with a narrower FWHM. AFM topographies show that the surface of ZnS films becomes rough after annealing, and the roughness on quartz is obviously larger than that on Si. The transmittance of ZnS films in the visible light region reaches 80%, which indicates that ZnS is suitable for making transparent conductive films. PL spectra show that there are two luminescence peaks at 425 and 445 nm related to the intrinsic defect levels of ZnS. Due to the small lattice mismatch, PL intensity on Si is significantly weaker than that on quartz. I-V characteristics of ZnS/p-Si heterojunctions show typical p-n junction diode-like rectification behavior.

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Section: Resultsmentioning

confidence: 65%

Characterization of ZnS films on different substrates by pulsed laser deposition

Wang,

Xing,

Feng

et al. 2023

Jpn. J. Appl. Phys.

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“…The CIE color chromaticity coordinates were determined through CIE calculation software. For pure ZnO NPs, the coordinates were found to be (x, y) = (0.18, 0.16) [ 92 ]. However, a noticeable shift in chromaticity coordinates was observed in N doped ZnO NPs.…”

Section: Resultsmentioning

confidence: 99%

Morphological evaluation and boosted photocatalytic activity of N-doped ZnO nanoparticles prepared via Co-precipitation method

Mondal,

Ayon,

Islam

et al. 2023

Heliyon

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“…The behavior of the log-scale I−V graph for UZO/n-Si thin film has been found to be nearly symmetric, which represents a conventional metal− semiconductor−metal (MSM) behavior of photodetectors. On The literature says that conventional MSM-based PDs show a higher dark current, slow response and recovery, and a higher recombination rate of photo charge carriers with visible light, 62,63 while a Schottky barrier-based PD has a comparatively low dark current, quick response and recovery time, and a controlled photoresponse performance. 64 The performance of both PDs was calculated by important parameters like response time, recovery time, response current, sensitivity, responsivity, and specific detectivity, as summarized in Table 2.…”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, the log-scale I – V graph of CZO/n-Si shows a nonsymmetric behavior, which suggests that a rectified p–n junction formed between the CZO thin film and the n-Si layer. The literature says that conventional MSM-based PDs show a higher dark current, slow response and recovery, and a higher recombination rate of photo charge carriers with visible light, , while a Schottky barrier-based PD has a comparatively low dark current, quick response and recovery time, and a controlled photoresponse performance …”

Section: Resultsmentioning

confidence: 99%

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Singh,

Ambedkar,

Tyagi

et al. 2023

ACS Omega

Self Cite

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Photodetection plays an essential role in the visiblelight zone and is important in modern science and technology owing to its potential applications in various fields. Fabrication of a stable photodetector remains a challenge for researchers. We demonstrated a high-response/recovery and self-powered undoped ZnO (UZO) and Cu-doped ZnO (CZO) thin film-based visible-light photodetector fabricated on a cost-effective Si substrate using reactive cosputtering. The structural, morphological, and optical properties of CZO and UZO thin films have been examined using X-ray diffraction, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and photoluminescence spectroscopy. The results of the CZO/n-Si photodetector compared with those of the undoped ZnO (UZO)/n-Si photodetector show that the CZO/n-Si exhibits a higher on/off ratio, responsivity, and detectivity than UZO/n-Si. Also, the CZO/ n-Si photodetector shows high stability and reproducibility over 20 cycles after 180 days. A relative study of CZO/n-Si-and UZO/n-Si-based photodetectors reveals the enhanced performance of the CZO/n-Si photodetector, which has a high on/off ratio of ∼300 with a high specific detectivity of 2.8 × 10 10 Jones for 75 mW visible light. The prepared self-powered CZO/n-Si/Ag thin film-based visible-light photodetector paves the way for the development of high-performance photodetector designs.

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Fabrication of low-cost and fast-response visible photodetector based on ZnS:Mn/p-Si heterojunction

Cited by 47 publications

References 68 publications

Characterization of ZnS films on different substrates by pulsed laser deposition

Characterization of ZnS films on different substrates by pulsed laser deposition

Morphological evaluation and boosted photocatalytic activity of N-doped ZnO nanoparticles prepared via Co-precipitation method

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

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