Fabrication of laterally displaced porous silicon filters

Marso, Michel; Wolter, M.; Arens-Fischer, R.; Lüth, H.

doi:10.1016/s0040-6090(00)01762-4

Cited by 10 publications

(6 citation statements)

References 5 publications

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“…As the passivated PS films are chemically stable enough to survive the developer, preventing the photoresist seepage into pores can be achieved using ProLIFT, which is a significantly simpler protection layer than the metal and dielectric layers used by previous researchers [12], [13]. ProLIFT (n = 1.72), which can be spun on in the same way as photoresist, is not photosensitive and can be removed by standard developers such as AZ400K.…”

Section: Resultsmentioning

confidence: 99%

“…Using alkaline developers would provide opportunities for new designs and functionality; however, since as-fabricated PS dissolves in seconds in low-concentration alkali solutions such as 1% KOH, it is incompatible with alkaline-based photoresist developers and processes [11]. Masking via photolithographic process with alkaline developers has so far only been achieved on PS with protective layers of either deposited metal [12] or formed silicon dioxide [13] on the surface prior to photolithography, to prevent photoresist penetration into the pores and protect the PS from the alkaline developer; such additional layers add to processing complexity and cost.…”

Section: Introductionmentioning

confidence: 99%

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Development of an Alkaline-Compatible Porous-Silicon Photolithographic Process

Lai

Parish

Liu

et al. 2011

J. Microelectromech. Syst.

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A technique for masking porous-silicon (PS) films by optical photolithography without significant film degradation is demonstrated for the first time. The chemical resistance of the PS films is achieved by low-temperature passivation via nitrogen annealing. The effect of the various photolithographic process steps is investigated by determining the changes in the optical properties of the films. The passivated PS films are shown to be resistant to strong alkaline-based solutions (dilute AZ400K developer) for up to 100 s with minimal reduction in optical thickness. Fourier transform infrared and spectral reflectance measurements show that the passivated PS films are relatively unaffected by a complete photolithography process, apart from the seepage of photoresist into the pores, which can be prevented by applying a thin protective polymer layer. Metal was deposited and patterned via the standard liftoff process on PS surface to demonstrate the feasibility of this technique.[2010-0262]

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Development of an Alkaline-Compatible Porous-Silicon Photolithographic Process

Lai

Parish

Liu

et al. 2011

J. Microelectromech. Syst.

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“…For example, PS is used as a sacrificial material for the manufacture of membranes [4]. Photolithographic techniques are very often associated with the production of devices, sometimes to dissolve only partially the PS layer [5]. Because it is desirable to reduce the size of devices, it is important to control with accuracy the dimensions of the zones to be porosified or dissolved.…”

mentioning

confidence: 99%

Etching of porous silicon in basic solution

Hamm¹,

Sakka

Ogata

2003

phys. stat. sol. (a)

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This study reveals that a silicon sample with a porous layer immersed in strong basic solution is etched in several steps according to the surface area of the various materials to be dissolved (nano/macroporous or bulk silicon). As a result it demonstrates the possibility to produce various silicon surface morphologies. These morphologies range from macropore structure to inverted pyramids with crystalline facets. The technique used was the immersion of porous silicon in basic solution and the parameters varied were the immersion time and the concentration of the solution. This is a simple and interesting method to produce a desired morphology of silicon. Furthermore, this work shows the limit of the porosity determination by the weight measurement method.

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“…However, no detail of the process was given and we have been unseccessful in performing any photolithographic process utilizing alkaline developer directly on as-fabricated PS without affecting the film yet. Protective layers consisting of metal [14] or silicon dioxide [15] was applied to the PS before photolithography to protect the samples from alkaline developers, which also prevented photoresist seepage into the pores. As our passivated PS films are chemically stable enough to survive the developer, a simple protection layer (ProLIFT TM ), which is spun on and baked before the coating of photoresist, can be used to prevent photoresist seepage.…”

Section: Applicationsmentioning

confidence: 99%

Chemical resistance of porous silicon: photolithographic applications

Lai

Parish

Dell

et al. 2010

Phys. Status Solidi C

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Low‐temperature passivation is employed in this study to improve the chemical resistance of porous silicon to both weak‐alkali and HF solutions, enabling complex and multi‐mask patterning of porous silicon. Passivation is achieved by annealing the film in N2 atmosphere at temperatures ranging from 560°C‐800°C. The resistance of the passivated porous silicon to both KOH and HF solutions was examined by immersing the sample into these solutions and working out the optical thickness change. It is shown that higher passivation temperatures result in improved chemical resistance. Infrared spectroscopy show that exposing the films to HF can remove the passivation layer, enabling repeated anodisation; the restoration of the hydrogen bond on the porous silicon surface after HF immersion makes repeated passivation and processing possible (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Fabrication of laterally displaced porous silicon filters

Cited by 10 publications

References 5 publications

Development of an Alkaline-Compatible Porous-Silicon Photolithographic Process

Development of an Alkaline-Compatible Porous-Silicon Photolithographic Process

Etching of porous silicon in basic solution

Chemical resistance of porous silicon: photolithographic applications

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