Fabrication of InP/InGaAs photodiodes for high bit rate communication by reactive ion etching

Seto, M.; Deri, R. J.; Schiavone, L. M.; Bhat, R.; Soole, J.B.D.; Schumacher, Hermann; Andreadakis, N.C.; Koza, M.A.

doi:10.1049/el:19910571

Cited by 8 publications

(2 citation statements)

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“…Large leakage currents limit detector sensitivity and, as such, much work has been done in regard to surface passivation of mesa-type devices fabricated in this material system. Several passivation methods for InGaAs/InP mesa p-i-n photodetectors have been reported in the literature, including the use of SiO 2 , 3,4 SiNx, 3,5,6 polyimide, 3,6-8 and benzocyclobutene (BCB) 9 with varying degrees of success. Another promising technique, sulfur passivation using chemical baths, was shown to be particularly effective in reducing surface states in III-V compounds in a variety of device types.…”

Section: Introductionmentioning

confidence: 99%

Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes

Teynor

Vaccaro

Buchwald

et al. 2005

Journal of Elec Materi

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A cadmium sulfide (CdS) passivation process was demonstrated for the first time on InGaAs/InP p-i-n mesa photodetectors. The passivated devices produced lower reverse bias leakage currents in comparison to devices that received only a thermally deposited SiO 2 film. The subsequent deposition of SiO 2 on the passivated devices produced virtually no change to the aforementioned leakage currents even after undergoing a 3-h, 300°C thermal treatment. In contrast, similar SiO 2 capped devices, fabricated without the CdS passivating layer, show a large increase in leakage current when subjected to the same thermal cycle. Leakage current versus mesa diameter measurements suggest these results are due to reduced surface recombination at the exposed mesa sidewall. X-ray photoelectron spectroscopy (XPS) results indicate the S:Cd ratio of these films to be 0.77.

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Section: Introductionmentioning

confidence: 99%

Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes

Teynor

Vaccaro

Buchwald

et al. 2005

Journal of Elec Materi

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“…A large leakage current density leads to more significant noise that interferes with the lower optical-to-electric response at a lower coupling efficiency in high speed WGPDs; the high/low definition of the optical signal in high bit rate applications is thus disturbed. The leakage current density is a strong function of the sidewall treatment, [7][8][9][10] such as the reactive ion etching ͑RIE͒ and wet etching processes. The RIE and wet chemical etching processes are essential for finely controlling lateral geometrical dimensions and are effective in well surface treatment, respectively.…”

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confidence: 99%

Light-Input Tapered SiO[sub x] Facet with InP Crystallographic Slope for InGaAsP–InGaAs–InP Waveguide Photodetectors

Yang

Lei

2010

J. Electrochem. Soc.

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A high speed waveguide photodetector (WGPD) integrated with a light input tapered SiOx facet that has high efficiency bandwidth product characteristics has been developed using the regrowth-free approach. This approach with monolithic integration is compared with standard processes. The typical excessive surface leakage current density was suppressed by more than 1 order of magnitude (from 115 to 7.4mA/cm2 at −5 V), and the responsivity was increased from 0.4 to 0.75 A/W. The 7μm oxide surrounding the WGPDs can be regarded as a SiOx waveguide in front of the absorption-region aperture and as a dielectric bonding pad capacitance. The proposed WGPD has a 3 dB bandwidth of 17 GHz with a responsivity of 0.75 A/W at a wavelength of 1.3μm under 132.5μW illuminations.

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