Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process

Park, Mi Sun; Lee, Doo Hyoung; Bae, Eun Jin; Kim, Dae-Hwan; Kang, Jin Gyu; Son, Dae‐Ho; Ryu, Si Ok

doi:10.1080/15421406.2010.495892

Cited by 4 publications

(1 citation statement)

References 21 publications

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“…Since 2003, transparent TFTs fabricated from amorphous oxide semiconductors have been a focus of worldwide research [ 125 ]. Compared to silicon materials, oxide semiconductor films exemplified by a-IGZO have superior low process temperature, long service life, high transmittance, large forbidden bandwidth (transparency), and high carrier mobility [ 126 , 127 , 128 , 129 , 130 ], and are widely applicable in liquid crystal displays, memory [ 131 , 132 ], and the Internet of Things [ 133 ]. Therefore, AOS TFTs are anticipated to replace a-Si:H TFTs as the primary devices for the subsequent generation of flat panel displays (flexible displays, transparent displays, etc.).…”

Section: Optical Fingerprint Recognitionmentioning

confidence: 99%

A Review of Fingerprint Sensors: Mechanism, Characteristics, and Applications

Niu

et al. 2023

Micromachines

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Identification technology based on biometrics is a branch of research that employs the unique individual traits of humans to authenticate identity, which is the most secure method of identification based on its exceptional high dependability and stability of human biometrics. Common biometric identifiers include fingerprints, irises, and facial sounds, among others. In the realm of biometric recognition, fingerprint recognition has gained success with its convenient operation and fast identif ication speed. Different fingerprint collecting techniques, which supply fingerprint information for fingerprint identification systems, have attracted a significant deal of interest in authentication technology regarding fingerprint identification systems. This work presents several fingerprint acquisition techniques, such as optical capacitive and ultrasonic, and analyzes acquisition types and structures. In addition, the pros and drawbacks of various sensor types, as well as the limits and benefits of optical, capacitive, and ultrasonic kinds, are discussed. It is the necessary stage for the application of the Internet of Things (IoT).

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Section: Optical Fingerprint Recognitionmentioning

confidence: 99%

A Review of Fingerprint Sensors: Mechanism, Characteristics, and Applications

Niu

et al. 2023

Micromachines

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High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage

Liu

Xiao

et al. 2013

Nanoscale

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Here we report the fabrication and characterization of high mobility amorphous ZnMgO/single-walled carbon nanotube composite thin film transistors (TFTs) with a tunable threshold voltage. By controlling the ratio of MgO, ZnO and carbon nanotubes, high performance composite TFTs can be obtained with a field-effect mobility of up to 135 cm(2) V(-1) s(-1), a low threshold voltage of 1 V and a subthreshold swing as small as 200 mV per decade, making it a promising new solution-processed material for high performance functional circuits. A low voltage inverter is demonstrated with a functional frequency exceeding 5 kHz, which is only limited by parasitic capacitance rather than the intrinsic material speed. The overall device performance of the composite TFTs greatly surpasses not only that of the solution-processed TFTs, but also that of the conventional amorphous or polycrystalline silicon TFTs. It therefore has the potential to open up a new avenue to high-performance, solution-processed flexible electronics which could significantly impact the existing applications, and enable a whole new generation of flexible, wearable, or disposable electronics.

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Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

Paxinos

Antoniou

Afouxenidis

et al. 2020

Applied Physics Letters

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We have investigated solution-processed tungsten-doped crystalline indium oxide (In2O3:W) as a function of the W content and their implementation in TFTs also employing spray coated Y2O3 gate dielectrics, and gold source and drain contacts. We showed that tungsten doping practically has no effect on the optical band gap whereas it shifts up the Urbach tail energy of In2O3:W films. The TFT performance employing In2O3:W channels also seems to decline at high tungsten concentration. Negative and positive bias stress under (dark) ambient conditions of TFTs employing In2O3:W(0.1 at%) showed remarkable improvement in their stability characteristics compared to the un-doped ones. This is evidenced by significantly smaller changes of the threshold voltage and subthreshold swing with insignificant change of the electron mobility that was practically unaffected under negative bias voltage. The negative bias stress results were interpreted in terms of the higher W-O bond dissociation energy compared a)

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Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process

Cited by 4 publications

References 21 publications

A Review of Fingerprint Sensors: Mechanism, Characteristics, and Applications

A Review of Fingerprint Sensors: Mechanism, Characteristics, and Applications

High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage

Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

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