Fabrication of homoepitaxial ZnO films by low-temperature liquid-phase epitaxy

Ehrentraut, Dirk; Sato, Hisakuni; Miyamoto, Miyuki; Fukuda, Tsuguo; Nikl, M.; Maeda, Katsumi; Niikura, Ikuo

doi:10.1016/j.jcrysgro.2005.11.046

Cited by 43 publications

(42 citation statements)

References 19 publications

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“…This is in agreement with earlier findings on the surface morphology of ZnO substrates [10]. On such preconditioned substrates we grew by chemical vapour deposition ZnO thin films.…”

Section: Resultssupporting

confidence: 92%

“…They converted from high resistive with free carrier concentrations around 10 14 cm -3 at room temperature activated by 300 meV (a typical value for hydrothermally grown ZnO substrates) to n-conducting with carrier densities around mid 10 16 cm -3 at room temperature [10,[13][14][15][16]. It appears that the mineralisers used in the growth of the substrates (Li, Na) diffuse out of the bulk leading to less compensation.…”

Section: Original Papermentioning

confidence: 99%

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Homoepitaxy of ZnO: from the substrates to doping

Neumann

Lautenschläger

Graubner

et al. 2007

Physica Status Solidi (b)

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We report on the homoepitaxial growth of ZnO thin films by chemical vapor deposition techniques. The preparation of the ZnO substrates after mechanical polishing employed a high temperature annealing step which produced atomically flat surfaces and removed all of the surface and subsurface damage. Two dimensional epitaxial growth was achieved without an additional buffer layer. The substrate had a rocking curve with a full width at half maximum of 27″ which can be compared with that of the film of 17″. The films had superior band edge luminescence as compared with the substrate for which the green luminescence band is dominating. The impurity content in the substrates especially Li is reduced by the high temperature annealing step and drops further close to the detection limit in the films. The low substrate temperatures around 660 °C allow for the incorporation of nitrogen on oxygen site as a shallow acceptor.

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“…This is in agreement with earlier findings on the surface morphology of ZnO substrates [10]. On such preconditioned substrates we grew by chemical vapour deposition ZnO thin films.…”

Section: Resultssupporting

confidence: 92%

Section: Original Papermentioning

confidence: 99%

Homoepitaxy of ZnO: from the substrates to doping

Neumann

Lautenschläger

Graubner

et al. 2007

Physica Status Solidi (b)

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“…Both extreme data characterized layers grown on non-annealed substrates. The literature data is widely ranging from 0.4 nm [10] to 20 nm [11]. These and other reports [12][13][14] demonstrate the dependence of the roughness on the way the substrate was prepared, the method of the film growth and the film thickness.…”

Section: Discussionmentioning

confidence: 87%

“…• [10] for the metal-organic CVD (MOCVD). According to the reported data, the parameter decreases with the increase in the film thickness (the result of 27 arcsec was reported for the thickness of 0.7 µm).…”

Section: Discussionmentioning

confidence: 99%

Substrates Grown from the Vapor for ZnO Homoepitaxy

et al. 2008

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The novel method of preparation of epi-ready ZnO substrates is demonstrated. The substrates were made of unique ZnO crystals grown by chemical vapor transport method using hydrogen as the transport agent. The effect of low-level doping (Mn, Co, Cu, and V) on the structural quality of the crystals was investigated. Atomic layer deposition was used to verify usability of the substrates for homoepitaxy. The thermal annealing prior to the atomic layer deposition process and effect of thermal annealing of the epitaxial layers was studied. The X-ray diffraction and atomic force microscopy methods were applied to study the structural quality of the ZnO layers. Detection of the dopants in the substrates by secondary ion mass spectroscopy made possible the measurement of the thickness of the layers. The obtained root mean square roughness for both the substrates and layers ranged between 0.2 nm and 5 nm, and was dependent on the sample crystallographic orientation and sequence of polishing and annealing procedures. The optimal recipe for the epi-ready substrate preparation was formulated.

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“…Group III-doped ZnO films have been prepared by various techniques such as pulsed laser deposition (PLD) and liquid phase epitaxy (LPE) [4][5]. There are many reports on the photoluminescence, Raman spectroscopy, and electrical properties of group III doped ZnO thin films grown by these techniques in the literature, and also extensive research on the impurity defects [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique

Wang

Claflin

Jiménez

2018

Oxide-Based Materials and Devices IX

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Indium-doped ZnO bulk crystals grown by the hydrothermal method are highly-conductive, with resistivity at 0.01 Ωcm at room temperature as revealed by Hall-effect measurement. In this paper we report on structural and optical properties of these crystals. The grown In:ZnO crystals have been studied by high resolution X-ray diffraction, micro-Raman scattering and low-temperature photoluminescence and cathodoluminescence. It was found that the c lattice parameter of the grown In:ZnO crystal expanded 0.06% with respect to the lithium-doped ZnO crystal seed, and the In-doped ZnO overgrew the seed crystal pseudomorphically but with high quality crystallinity; the X-ray rocking curves show the FWHM of the Zn face and O faces are only 0.05 o and 0.1 o ; and the indium concentration in the crystal reaches the solubility limit. Raman spectra show strain relaxation gradually from the regrowth interface as well as a weak spectral feature at 723 cm -1 . The peak at 312 cm -1 noticed in hydrothermally grown In:ZnO nanostructures does not appear in our In-doped crystals, indicating that this peak may be associated with specific defects (e.g. surface related) of the nanostructures. Photoluminescence measurements show that an indium donor bound exciton peak I 9 (In 0 X) is the dominant peak in the PL spectrum, located at 3.3586 eV on the zinc face and 3.3577 eV on the oxygen face. Both of them deviated from the consensus literature value of 3.3567 eV, probably due to strain in the crystal induced by impurities.

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Fabrication of homoepitaxial ZnO films by low-temperature liquid-phase epitaxy

Cited by 43 publications

References 19 publications

Homoepitaxy of ZnO: from the substrates to doping

Homoepitaxy of ZnO: from the substrates to doping

Substrates Grown from the Vapor for ZnO Homoepitaxy

Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique

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