Fabrication of highly ordered sub-20 nm silicon nanopillars by block copolymer lithography combined with resist design

Salaün, Mathieu; Zelsmann, M.; Archambault, Sophie; Borah, Dipu; Kehagias, N.; Simão, Cláudia; Lorret, O.; Shaw, Matthew T.; Torres, C. M. Sotomayor; Morris, Michael A.

doi:10.1039/c3tc30300d

Cited by 27 publications

(24 citation statements)

References 34 publications

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“…This was followed by an O2 plasma etch to remove PS and affect oxidation of the PDMS to yield silica-like topographies indicative of the original BCP pattern. These steps follow similar methodology developed by Ross et al [17] and full etch details are available elsewhere [3,4,[18][19][20].…”

Section: Plasma Etching Of Bcp Filmsmentioning

confidence: 99%

“…Here, we apply the use of the emerging microwave assisted solvothermal method (work in this area is in its infancy compared to more established methods of inducing self-assembly [2][3][4]) to promote self-assembly of a polystyrene-blockpolydimethylsiloxane (PS-b-PDMS) BCP at Si3N4 substrates and demonstrate the usefulness of this approach. This BCP has particular relevance because of its high Flory-Huggins parameter (χ) [12] which allows sub-10 nm feature size scaling [13][14][15][16], whilst high etch selectivity between PS and PDMS [17] facilitates selective removal of PS to form topographical silica-like patterns [3,4,[18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Block Co-Polymers for Nanolithography: Rapid Microwave Annealing for Pattern Formation on Substrates

et al. 2015

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The integration of block copolymer (BCP) self-assembled nanopattern formation as an alternative lithographic tool for nanoelectronic device fabrication faces a number of challenges such as defect densities, feature size, pattern transfer, etc. Key barriers are the nanopattern process times and pattern formation on current substrate stack layers such as hard masks (e.g., silicon nitride, Si3N4). We report a rapid microwave assisted solvothermal (in toluene environments) self-assembly and directed self-assembly of a polystyrene-blockpolydimethylsiloxane (PS-b-PDMS) BCP thin films on planar and topographically patterned Si3N4 substrates. Hexagonally arranged, cylindrical structures were obtained and good pattern ordering was achieved. Factors affecting BCP self-assembly, notably anneal time and temperature, were studied and seen to have significant effects. Graphoepitaxy within the topographical structures provided long range, translational alignment of the patterns. The effect of surface topography feature size and spacing was investigated. The solvothermal microwave based technique used to provide periodic order in the BCP patterns showed significant promise and ordering was achieved in much shorter periods than more conventional thermal and solvent annealing methods. The implications of the work in terms of manufacturing technologies are discussed. OPEN ACCESSPolymers 2015, 7 593

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Section: Plasma Etching Of Bcp Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Block Co-Polymers for Nanolithography: Rapid Microwave Annealing for Pattern Formation on Substrates

et al. 2015

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“…In a previous work, we used a series of silsesquioxane resist formulations in order to precisely control the wetting conditions of the PS-b-PDMS. This has allowed us to control the orientation of the PDMS cylinders into the trenches, with alignments parallel or perpendicular to the trenches sidewalls or perpendicular to the trenches bottom surface [15]. Changing the surface chemistry of the substrate has strong effects on the orientation of the PDMS cylinders.…”

Section: Choice Of the Patterned Substratementioning

confidence: 99%

Directed self-assembly of PS-b-PDMS into 193nm photoresist patterns and transfer into silicon by plasma etching

Archambault

Girardot²,

Delalande³

et al. 2014

SPIE Proceedings

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Block CoPolymer (BCP) self-assembly creates periodical patterns with feature sizes eventually below 10 nm. On plain substrates, ordering is only obtained in grains not larger than a few micrometers but self-assembly in trenches of a pattern (using so-called graphoepitaxy technique) can create long-range order between the polymer micro-domains. As a result, such directed self-assembly (DSA) approaches may be used as ultra-high resolution patterning schemes in the microelectronics industry.Due to its ease of processing, a large majority of the lithographic BCP work reported so far concerned polystyreneblock-polymethylmethacrylate (PS-b-PMMA). Researchers show now an increased interest to polystyrene-blockpolydimethylsiloxane (PS-b-PDMS) block copolymers due to its improved resolution.In the present study, typical industry-like photolithography stacks are patterned by combining graphoepitaxy with cylindrical PS-b-PDMS BCP and state of the art plasma etching technologies. The industry like photolithography stack is fabricated on 300 mm diameter silicon wafers, and composed of three layers: Spin-On-Carbon (SOC), Siliconcontaining Anti-Reflective Coating (SiARC) and 193 nm photolithography resist. About 60 nm deep trenches are first patterned by plasma etching in the SiARC/SOC stack using the 193 nm photolithography resist mask. These trenches are then used to confine the BCP and guide the self-assembly of horizontal PDMS cylinders. Wetting conditions allows avoiding the interfacial PDMS wetting layer at the bottom and lateral interfaces after the solvent annealing step.Finally, dedicated pulsed plasma etching conditions were developed in order to reveal the BCP patterns, transfer them into the remaining SOC layer under the trenches and finally into the underlying silicon substrate. 15 nm half-pitch dense line/space features are formed with a height up to 105 nm.In conclusion, long-range order line/space features could be produced by using horizontal cylindrical high FloryHuggins parameter (χ) BCPs combined with industry-type photolithography stacks.

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“…Functionalized POSS monomers were designed and synthesized by incorporating the necessary functional groups onto the Octasilane POSS backbone using hydrosilylation chemistry [28,29].…”

Section: Introductionmentioning

confidence: 99%

Nanocontact printing stamp material via bi-functionalization of polyhedral oligomeric silsesquioxanes

Kastner

Lorret

Rank

et al. 2015

European Polymer Journal

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Fabrication of highly ordered sub-20 nm silicon nanopillars by block copolymer lithography combined with resist design

Cited by 27 publications

References 34 publications

Block Co-Polymers for Nanolithography: Rapid Microwave Annealing for Pattern Formation on Substrates

Block Co-Polymers for Nanolithography: Rapid Microwave Annealing for Pattern Formation on Substrates

Directed self-assembly of PS-b-PDMS into 193nm photoresist patterns and transfer into silicon by plasma etching

Nanocontact printing stamp material via bi-functionalization of polyhedral oligomeric silsesquioxanes

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