Fabrication of high sensitivity and fast response IR photodetector based on VO2 nanocrystalline thin films prepared on the silicon substrate

Selman, Abbas M.; Kadhim, M.J.

doi:10.1016/j.optmat.2022.112664

Cited by 12 publications

(3 citation statements)

References 33 publications

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“…Driven by structural changes from insulating monoclinic (M) at low temperature to metallic rutile (R) at temperatures above the transition temperature ( T c ), this phenomenon involves great optical and electronic changes. This makes this material especially advantageous for thermochromic smart window applications. − These appealing properties of VO 2 have also been exploited for a wide range of photonic, optoelectronic, and electronic phase-change devices on silicon platforms, such as optical modulators and limiters, − infrared (IR) photodetectors, , or optical , and electrical − switches. Likewise, the VO 2 /Si system is also considered a potential candidate for its application as a passive intelligent radiator for spacecraft thermal control .…”

Section: Introductionmentioning

confidence: 99%

Facile Fabrication of High-Performance Thermochromic VO₂-Based Films on Si for Application in Phase-Change Devices

et al. 2023

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This work reports on an alternative and advantageous procedure to attain VO 2based thermochromic coatings on silicon substrates. It involves the sputtering of vanadium thin films at glancing angles and their subsequent fast annealing in an air atmosphere. By adjusting thickness and porosity of films as well as the thermal treatment parameters, high VO 2 (M) yields were achieved for 100, 200, and 300 nm thick layers treated at 475 and 550 °C for reaction times below 120 s. Comprehensive structural and compositional characterization by Raman spectroscopy, X-ray diffraction, and scanning-transmission electron microscopies combined with analytical techniques such as electron energy-loss spectroscopy bring to the fore the successful synthesis of VO 2 (M) + V 2 O 3 /V 6 O 13 /V 2 O 5 mixtures. Likewise, a 200 nm thick coating consisting exclusively of VO 2 (M) is also achieved. Conversely, the functional characterization of these samples is addressed by variable temperature spectral reflectance and resistivity measurements. The best results are obtained for the VO 2 /Si sample with changes in reflectance of 30−65% in the near-infrared at temperatures between 25 and 110 °C. Similarly, it is also proven that the achieved mixtures of vanadium oxides can be advantageous for certain optical applications in specific infrared windows. Finally, the features of the different structural, optical, and electrical hysteresis loops associated with the metal−insulator transition of the VO 2 /Si sample are disclosed and compared. These remarkable thermochromic performances hereby accomplished highlight the suitability of these VO 2 -based coatings for applications in a wide range of optical, optoelectronic, and/or electronic smart devices.

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Section: Introductionmentioning

confidence: 99%

Facile Fabrication of High-Performance Thermochromic VO₂-Based Films on Si for Application in Phase-Change Devices

et al. 2023

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“…A field-dependent IMT can be triggered in VO 2 by external thermal, [1] stress, [2] electrical, [3] or optical stimuli. [4,5] VO 2 has been one of the candidates for Mott field-effect transistors, [6,7] photodetectors, [8][9][10] electrical switches, [11] smart windows, [12][13][14][15][16] and thermal regulators. [17,18] To manipulate IMT on the nanoscale is of broad scientific interest and is always critical for functional vanadium oxides toward advanced sensors and information devices.…”

Section: Introductionmentioning

confidence: 99%

“…A field‐dependent IMT can be triggered in VO 2 by external thermal, [ 1 ] stress, [ 2 ] electrical, [ 3 ] or optical stimuli. [ 4,5 ] VO 2 has been one of the candidates for Mott field‐effect transistors, [ 6,7 ] photodetectors, [ 8–10 ] electrical switches, [ 11 ] smart windows, [ 12–16 ] and thermal regulators. [ 17,18 ]…”

Section: Introductionmentioning

confidence: 99%

Metallic VO_2−x Nanobeam Implanted With an Insulating VO₂ Segment Toward Artificial Electrical Modulation

Zhang

Huang

Yang

et al. 2022

Physica Rapid Research Ltrs

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Insulator–metal transition (IMT) in correlated vanadium oxides is among critical issues and has drawn significant attention in the communities of condensed matter physics, functional Mott materials and devices. It is always essential to understand and manipulate IMT behaviors in vanadium oxides toward advanced electronics and photonics. Selected‐area chemical nanoengineering (SACNE) enables direct modulating of structural compositions and physical/chemical properties. Herein, the realization of an IMT in metallic VO2−x nanobeams through artificially implanting an insulating VO2 segment is described. Original temperature‐dependent IMT behaviors are suppressed when insulating VO2 was reduced into metallic VO2−x. By exploiting an implanting nanoengineering, oxidation states and compositions to fabricate an insulating segment in the metallic VO2−x nanobeam are selectively controlled. Then, an abrupt temperature‐dependent resistance changing is demonstrated in the VO2−x nanobeam with implanted VO2 segment. It is expected that the modulations on segmental compositions and IMT behaviors in the VO2−x nanobeam would help for the understanding of correlated oxides and the construction of IMT‐based sensors and transistors.

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Modulation of the Electronic Structure and Optical Properties of VO₂ by Doping with X (X = Be, Mg, Al, Ga)

Zhao,

Wei,

Guo

et al. 2024

Physica Status Solidi (b)

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Monoclinic VO2, a semiconductor with a narrow bandgap, is highly suitable for infrared (IR) spectrum utilization. The electrical and optical properties of VO2 doped with X are thoroughly examined. Specifically, Mg doping decreases the formation of V–V dimers. The presence of the 3d orbitals of the V atoms and the 2s orbital of the Mg atom leads to a decrease in the bandgap. This leads to an absorption peak of 104 in the mid‐infrared (mid‐IR) range, resulting in an optical absorption that is approximately ten times greater than that of pure VO2. As a result, it becomes simpler to detect. Notably, the responsiveness of the system doped with Mg to IR light increases. VO2 significantly increases the photocurrent density, with a 1000‐fold increase in the mid‐IR region and a tenfold increase in the near‐IR region. This finding provides a theoretical basis for empirically exploring VO2 in IR technology.

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Fabrication of high sensitivity and fast response IR photodetector based on VO2 nanocrystalline thin films prepared on the silicon substrate

Cited by 12 publications

References 33 publications

Facile Fabrication of High-Performance Thermochromic VO₂-Based Films on Si for Application in Phase-Change Devices

Facile Fabrication of High-Performance Thermochromic VO₂-Based Films on Si for Application in Phase-Change Devices

Metallic VO_2−x Nanobeam Implanted With an Insulating VO₂ Segment Toward Artificial Electrical Modulation

Modulation of the Electronic Structure and Optical Properties of VO₂ by Doping with X (X = Be, Mg, Al, Ga)

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Fabrication of high sensitivity and fast response IR photodetector based on VO2 nanocrystalline thin films prepared on the silicon substrate

Cited by 12 publications

References 33 publications

Facile Fabrication of High-Performance Thermochromic VO2-Based Films on Si for Application in Phase-Change Devices

Facile Fabrication of High-Performance Thermochromic VO2-Based Films on Si for Application in Phase-Change Devices

Metallic VO2−x Nanobeam Implanted With an Insulating VO2 Segment Toward Artificial Electrical Modulation

Modulation of the Electronic Structure and Optical Properties of VO2 by Doping with X (X = Be, Mg, Al, Ga)

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Facile Fabrication of High-Performance Thermochromic VO₂-Based Films on Si for Application in Phase-Change Devices

Facile Fabrication of High-Performance Thermochromic VO₂-Based Films on Si for Application in Phase-Change Devices

Metallic VO_2−x Nanobeam Implanted With an Insulating VO₂ Segment Toward Artificial Electrical Modulation

Modulation of the Electronic Structure and Optical Properties of VO₂ by Doping with X (X = Be, Mg, Al, Ga)