Fabrication of high quality silicon–polyaniline heterojunctions

Laranjeira, Jane Maria Goncalves; Khoury, Helen J.; Azevêdo, W.M. de; Silva, Eronides F. da; Vasconcelos, Elder A. de

doi:10.1016/s0169-4332(01)00901-1

Cited by 44 publications

(11 citation statements)

References 14 publications

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“…Among the family of organic semiconductors, the semiconducting polymers have attracted the most attention for applications in electronic and optoelectronic devices, particularly due to their exceptional electrical properties and easy synthesis [2][3][4]. As a result, this category of polymers has been used in several applications such as organic light emitting diodes (OLEDs) [5,6], solar cells [7,8], battery electrodes [9,10], photodiodes [11], energy storage [12], transistors [13], gas sensors [14], biosensors [15], radiation sensors [16], anti-corrosive coatings [17,18] and electromagnetic interference shielding [19].…”

Section: Introductionmentioning

confidence: 99%

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Jameel

Aziz

Felix

et al. 2016

Applied Surface Science

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This article reports the effect of n-type GaAs substrate orientation, namely (100), IntroductionEssentially conducting polymers, such as polyaniline (PANI), sulfonated polyaniline (SPAN), poly(p-phenylene-vinylene), polypyrrole, polyacetylene, polythiophene, etc., are promising semiconductors materials with confirmed technological potential due to their unique optical and electrical properties [1]. Among the family of organic semiconductors, the semiconducting polymers have attracted the most attention for applications in electronic and optoelectronic devices, particularly due to their exceptional electrical properties and easy synthesis [2][3][4]. As a result, this category of polymers has been used in several applications such as organic light emitting diodes (OLEDs) [5,6], solar cells [7,8] As it is well known, the crystallographic orientation of the substrate has a significant effect on incorporation of impurities and defects and consequently on optical and electronic properties of III-V materials [28]. The ideality factor n and barrier height (BH) as well as the electrical characteristics are fundamental parameters of a Schottky barrier diode (SBD) and these give an indication about the quality of the Schottky interface. The SBD parameters must be determined over a broad range of temperatures because the analysis of the current-voltage (I-V) characteristics of the SBD measured only at room temperature does not provide accurate information about the conduction mechanism and the barrier nature created at metal semiconductor interface in order to understand these phenomena and determine precisely the parameters of the Schottky diodes. Chand et al. [29] and Hardikar et al.[30] analysed the experimental currentvoltage data which revealed that there is an increase in the ideality factor and a decrease in the zero-bias barrier height with decreasing temperature. Consequently, the ideality factor and the barrier height established from forward I-V characteristics are found to be temperature dependent. This confirms that the Schottky barrier height is inhomogeneous in nature at the interface. This behaviour has been successfully described on the basis of the thermionic emission mechanism with Gaussian distribution of the barrier heightTo fabricate a hybrid organic/inorganic semiconductor heterojunction device with the aim to obtain specific optical and electrical properties on the bases of their doping levels, a thin organic film is deposited onto the surface of a conventional inorganic semiconductor substrate. This can be done by simple and inexpensive methods such as 4 spin coating used for thin film deposition at room temperature. Recently, a new technique of SPAN films preparation has been developed by Yang et al. [32].In this paper, we report on the fabrication and electrical characterization of Au/SPAN/GaAs heterojunctions grown on three different substrate orientations, namely n-type GaAs (100), (311)A and (311)B. We have investigated the effect of the substrate orientation on the heterojunction parameters ...

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Section: Introductionmentioning

confidence: 99%

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Jameel

Aziz

Felix

et al. 2016

Applied Surface Science

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“…This finding may be explained as being due to the use of SiNWs, providing a 1-D nanowire array which offers a promising substrate with a direct pathway for charge transport and a high mobility for carriers. 17 Regardless of these details, the low η and R s values obtained in the present work are promising for the fabrication of high quality NPOT/SiNWs heterojunctions.…”

Section: − V Characteristics Of the Synthesized Heterojunctionmentioning

confidence: 76%

“…[13][14][15][16] Compared with PSi heterojunctions, the aligned one-dimensional (1-D) SiNWs arrays offer a promising substrate which can provide a direct pathway of charge transport and high mobility for carriers. 17 Thus, SiNWs are expected to play an important role in enhancement of the characteristics of the fabricated heterojunction diodes.…”

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confidence: 99%

Heterojunction of poly (o-toluidine) and silicon nanowires

et al. 2015

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Abstract. A nanostructured poly (o-toluidine)/silicon nanowires (NPOT/SiNWs) heterojunction has been fabricated with a low cost and simple techniques, where NPOT has been in situ polymerized upon SiNWs synthesized by chemical etching of a silicon wafer. The morphology of SiNWs before and after deposition of NPOT has been examined by scanning electron microscope (SEM). The chemical composition of NPOT has been investigated by Fourier transform infrared (FTIR), ultraviolet-visible (UV-visible) spectroscopy, and X-ray diffraction (XRD) techniques. NPOT morphology has also been examined by SEM before being deposited on the SiNWs. I-V measurements of the device have been made at room temperature under dark conditions. The heterojunction diode parameters such as turn-on voltage, reverse saturation current (I 0 ), ideality factor (η), barrier height (Φ B ) and series resistance (R s ) have been determined from the I − V curves using Schottky equations. The device shows promising characteristics as a candidate for producing heterojunction diodes. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…5,6 Early articles describe how doped PANI/crystalline Si heterojunctions could be fabricated. [7][8][9] These diodes possess great potential as radiation or gas sensors. Wang et al recently fabricated heterojunction solar cells using acid-doped PANI on crystalline n-type Si and found that the V oc for cells fabricated with high-conductivity PANI saturated at 0.51 V, while the saturated photocurrent density was 17 mA/cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Hybrid Inorganic–Organic Heterojunction Solar Cell

Ebrahim

Soliman

Abdel‐Fattah

2011

Journal of Elec Materi

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In this study, solar cells were fabricated by spin-coating polyaniline (PANI) base (EB) over an n-type Si substrate. The final heterojunction's device structure was Al/n-type Si/EB/Au. The electrical properties of the resultant device were investigated by measuring the current density-voltage (J-V), capacitance-voltage (C-V), and impedance characteristics in the dark and under illumination. N-methyl-2-pyrrolidone (NMP), dimethylformamide (DMF), and tetrahydrofuran (THF) were used as solvents for EB. The effects of these solvents on the photovoltaic cell parameters were investigated, and the open-circuit voltage (V oc ), short-circuit current density (J sc ), fill factor (FF), and energy conversion efficiency (g) were determined. It was found that heterojunctions fabricated using EB dissolved in NMP, DMF, and THF produced J sc of 10 mA/cm 2 , 5.123 mA/cm 2 , and 2.78 mA/cm 2 , respectively. Rollover and crossover phenomena in the J-V curves under illumination were explained based on the back-contact barrier and surface recombination of electrons at the back contact. The linearity of Mott-Schottky plots indicated the formation of a heterojunction between EB and n-type Si, and the slope of 1/C 2 versus voltage changed under illumination. The high values of shunt resistance were decreased under illumination, indicating that the efficiency of this type of heterojunction solar cell was limited by shunt resistance and the narrow absorption range of the solar spectrum by EB.

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Fabrication of high quality silicon–polyaniline heterojunctions

Cited by 44 publications

References 14 publications

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Heterojunction of poly (o-toluidine) and silicon nanowires

Hybrid Inorganic–Organic Heterojunction Solar Cell

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