Fabrication of High-<i>Q</i> Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC

Bracher, David O.; Hu, Evelyn L.

doi:10.1021/acs.nanolett.5b02542

Cited by 59 publications

(72 citation statements)

References 38 publications

(81 reference statements)

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“…A second RIE step (STS ICP-RIE) transfers the pattern to the SiC wafer, which consists of a 250-nm p-type (Al, 5 × 10 17 cm −3 ) epilayer homoepitaxially grown on an n-type substrate (N, 10 19 cm −3 ). After pattern transfer, the n-type substrate is removed with a dopant-selective photoelectrochemical etch to provide optical isolation for the cavity (25,31). This procedure allows us to create cavities out of high-quality epitaxially grown material.…”

Section: Methodsmentioning

confidence: 99%

“…This disparity between measured and theoretical Q is commonly observed in fabricated PCC devices (16-18, 20, 23). As discussed in previous work (25), the measured Q is often limited by fabrication imperfections, particularly those linked to reactive ion etching, like roughness, angled sidewalls, and other ion-induced damage. Other limiting factors may include absorption by the SiVs introduced to the devices and by other defects also created by the ion implantation.…”

Section: Significancementioning

confidence: 99%

“…This technique is commonly used and can typically reversibly redshift cavity modes by at least 20 nm without degrading their Qs (17,18,22,29). Modes can also be appropriately blueshifted of the ZPL by using previously reported techniques for tuning 4H-SiC cavities (25). Therefore, we selected cavities with well-coupled modes that were blueshifted relative to the 859.1-nm V1′ line and took measurements as these modes are tuned through both V1′ and V1 ZPLs.…”

Section: Significancementioning

confidence: 99%

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Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Bracher

Zhang

2017

Proc. Natl. Acad. Sci. U.S.A.

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107

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Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light–matter interface both to augment the defect emission and to aid in studying the defects’ properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.

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Section: Methodsmentioning

confidence: 99%

Section: Significancementioning

confidence: 99%

Section: Significancementioning

confidence: 99%

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Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Bracher

Zhang

2017

Proc. Natl. Acad. Sci. U.S.A.

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107

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“…Among the solid-state emitters, color centers in diamond and silicon carbide [14,15] are the ones that feature high dipole moment and small inhomogeneous broadening (∆ < 30 GHz) needed for fast and scalable nanophotonics platform. Moreover, their integration with nanocavities is a topic of active research [16][17][18][19] paving the way for experimental demonstrations of color center based CQED. We consider theoretically the coherence effects in an N = 2 multi-emitter CQED system [ Fig.…”

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confidence: 99%

Photon blockade in two-emitter-cavity systems

et al. 2017

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The photon blockade (PB) effect in emitter-cavity systems depends on the anharmonicity of the ladder of dressed energy eigenstates. The recent developments in color center photonics are leading toward experimental demonstrations of multi-emitter-cavity solid-state systems with an expanded set of energy levels compared to the traditionally studied single-emitter systems. We focus on the case of N = 2 nonidentical quasi-atoms strongly coupled to a nanocavity in the bad cavity regime (with parameters within reach of the color center systems), and discover three PB mechanisms: polaritonic, subradiant and unconventional. The polaritonic PB, which is the conventional mechanism studied in single-emitter-cavity systems, also occurs at the polariton frequencies in multi-emitter systems. The subradiant PB is a new interference effect owing to the inhomogeneous broadening of the emitters which results in a purer and a more robust single photon emission than the polaritonic PB. The unconventional PB in the modeled system corresponds to the suppression of the singleand two-photon correlation statistics and the enhancement of the three-photon correlation statistic. Using the effective Hamiltonian approach, we unravel the origin and the time-domain evolution of these phenomena.Introduction-While an arbitrary number of photons can populate a bare nanocavity, the paradigm changes with the introduction of a strongly coupled dipole emitter. The photon blockade (PB) effect prevents the absorption of the second photon at specific frequencies due to the nonlinearity of the emitter that dresses the energy states and leads to an anharmonic ladder. This effect has been extensively studied in single-emitter (N = 1) atomic [1, 2] and quantum dot [3,4] cavity quantum electrodynamics (CQED), as well as in circuit QED systems [5]. Here, the effect occurs at the frequencies of the dressed states so-called polaritons (polaritonic PB) and results in a faster emission rate of single photons compared to the bare emitter. Experimentally, a signature of single photon emission has been the reduced value of the second order coherence g (2) (0) < 1. A recent paper has contested this criterion [6], demonstrating conditions for the so-called unconventional photon blockade where the twophoton statistic is suppressed, but the enhanced higher order coherences strengthen the generation of multiple photons. A cavity coupled to multiple (N 1) emitters would offer a richer set of dressed states and extend new opportunities for nonclassical light generation with applications in quantum key distribution [7], quantum metrology [8] and quantum computation [9]. Moreover,

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“…However, it is important to understand not only how to create high quality optical cavities in this material (to maximize cavitydefect coupling) but also how to do so while incorporating the desired defects. In previous work 18 , we have demonstrated the fabrication of 1D photonic crystal cavities (PCC) in 4H-SiC with high measured values of Q. Additionally, we have observed coupling of the PCC resonant modes to the emission of silicon vacancy defects that were created through C 12 ion implantation. In this work, we instead study arrays of nanobeam PCCs in 4H-SiC coupled to silicon vacancy defects generated through electron irradiation.…”

Section: Introductionmentioning

confidence: 92%

Fabrication of high-quality nanobeam photonic crystal cavities in 4H silicon carbide with embedded color centers

Bracher

2016

SPIE Proceedings

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The Harvard community has made this article openly available. Please share how this access benefits you. Your story matters. ABSTRACTA wide band-gap semiconductor with a long history of growth and device fabrication, silicon carbide (SiC) has attracted recent attention for hosting several defects with properties similar to the nitrogen vacancy center in diamond. In the 4H polytype, these include the silicon vacancy center and the neutral divacancy, which have zero phonon lines (ZPL) in the near-IR and may be useful for quantum information and nanoscale sensing. For many such applications, it is critical to increase the defect emission into the ZPL by coupling the emission to an optical cavity. Accordingly, we have pursued the fabrication of high quality 1D nanobeam photonic crystal cavities (PCCs) in 4H-SiC, using homoepitaxially grown material and a photoelectrochemical etch to provide optical isolation. These PCCs are distinctive in their high theoretical quality factors (Q > 10 6 ) and low modal volumes (V < 0.5 (λ/n) 3 ). Here, we present arrays of nanobeam PCCs with varied lattice constant containing embedded silicon vacancy defects generated by electron irradiation, to assess its viability as a method for defect creation. The lattice constant variation allows us to create devices with modes spanning the entire range of the silicon vacancy emission. We accordingly demonstrate nanobeam PCCs with resonant modes near both ZPLs of the silicon vacancy defect. Moreover, we measure devices with the highest Q cavity modes coupled to point defect emission in SiC yet reported, providing evidence that electron irradiation can be used to generate point defects while maintaining high quality optical devices.

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Fabrication of High-Q Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC

Cited by 59 publications

References 38 publications

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Photon blockade in two-emitter-cavity systems

Fabrication of high-quality nanobeam photonic crystal cavities in 4H silicon carbide with embedded color centers

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