We report on a method to fabricate nanometer scale mechanical structures from bulk, single-crystal Si substrates. A technique developed previously required more complex fabrication methods and an undercut step using wet chemical processing. Our method does not require low pressure chemical vapor deposition of intermediate masking layers, and the final step in the processing uses a dry etch technique, avoiding the difficulties encountered from surface tension effects when wet processing mechanically delicate or large aspect ratio structures. Using this technique, we demonstrate fabrication of a mechanical resonator with a fundamental resonance frequency of 70.72 MHz and a quality factor of 2ϫ10 4 . © 1996 American Institute of Physics. ͓S0003-6951͑96͒04144-7͔The combination of electron beam lithography and Si micromachining techniques makes it possible to fabricate submicron mechanical structures from single crystal substrates. Structures can be fabricated with fundamental mechanical resonance frequencies reaching into the microwave frequency bands, and can be made small enough that it is statistically unlikely that there are any crystalline defects contained within the structure. Such structures should exhibit very high quality factors and other mechanical properties that reflect the true nature of the material, such as large breaking stress. Elsewhere we have shown that such devices can be used in a new class of particle and energy sensors due to their very small mass, small size, high operating frequencies, and sensitivity to external conditions. 1 Furthermore, a resonator with a fundamental mechanical resonance frequency of a few times 10 9 Hz can be fabricated; this could exhibit macroscopic quantum effects at dilution refrigerator temperatures and might display interesting interactions with thermal phonons with the same range of frequencies. 1 Other authors have reported recipes for fabricating submicron suspended Si structures. 2,3 These recipes are somewhat more complicated and require more extensive processing equipment than the method we describe here. The final undercut step of the suspended structures is performed in our recipe by using a dry etch process, which avoids potential damage due to surface tension encountered in wet etch processes. We first describe the method used to fabricate suspended structures, and then describe the method used to measure the resonance properties of simple doubly clamped beams and show data for one such structure.We used ͗100͘ orientation, nominally undoped n-type Si wafers with a resistivity at 298 K of Ͼ1000 ⍀ cm. The substrates were cleaned, and on them a 1 m SiO 2 layer was grown by pyrogenic steam oxidation for 1 h at 1100°C, with O 2 flowing at 0.4 scfm through water at 95°C; this oxide layer serves as a mask for the isotropic reactive ion etching ͑RIE͒ of the Si substrate, the step that undercuts the suspended structures.Large area contact pads were defined by optical lithography. A 100-nm-thick layer of Ni was rf sputtered onto a liftoff pattern, and the photor...