Fabrication of high aspect ratio doping region by using trench filling of epitaxial Si growth

Yamauchi, S.; Urakami, Yasushi; Suzuki, Natsuki; Tsuji, Naoki; Yamaguchi, Hitoshi

doi:10.1109/ispsd.2001.934630

Cited by 10 publications

(2 citation statements)

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“…The breakdown voltage of 195V for the SJ diode is in good agreement with the value simulated for a pin column depth of 9.5pm. Thus, the influence of the micro-voids on breakdown voltage is small as estimated in our previous work [4]. The leakage current ofthe SJ diode is below 1x10.…”

Section: Resultsmentioning

confidence: 56%

Electrical properties of super junction p-n diodes fabricated by trench filling

Yamauchi

Hattori

Yamaguchi

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.

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We have fabricated Super Junction (SJ) p-n diodes by our previously proposed defect-less trench filling technique with pre-and postannealing in H1. The trench tilling technique has been applied to a comparatively low aspect ratio p/n column structure. Electrical measurements o f the SJ p n diode indicate an increase in breakdown voltage from 70V to 195V due to the multi RESURF effect of the p/n column structure. The leakage current of the diode is below lalO-'A/cmz at a revetie bias voltage of 150V. I t has been experimentally confirmed that complete depletion occurs when the number of acceptors in the p column is equal to that of donors in the n column.

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Section: Resultsmentioning

confidence: 56%

Electrical properties of super junction p-n diodes fabricated by trench filling

Yamauchi

Hattori

Yamaguchi

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.

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“…These devices have such inherent characteristics as a low specific on-resistance (R ON,SPEC ), a high switch speed, and a high current derivability. However, power MOSFETs with the SJ concept are complicated by the fact that they must achieve ideal alternatively-stacked p and n layers using multi-epitaxy and multi-implantation [7], and deep etching/epitaxial growth [8], [9] technologies are generally restricted to the charge balance between the p and n layers [10]. Additionally, a power MOSFET with the SJ concept is superior to a RESURF-type device in a high-voltage application (BV DS > 200 V).…”

Section: Introductionmentioning

confidence: 99%

Simulation and Fabrication Studies of Semi-superjunction Trench Power MOSFETs by RSO Process with Silicon Nitride Layer

Na¹

2012

ETRI J

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In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi‐superjunction (semi‐SJ) trench double‐diffused MOSFET (TDMOS). In this new process, the thick single insulation layer (SiO2) of a conventional device is replaced by a multilayered insulator (SiO2/SiNx/TEOS) to improve the process and electrical properties. To compare the electrical properties of the conventional RSO TDMOS to those of the proposed TDMOS, that is, the nitride_RSO TDMOS, simulation studies are performed using a TCAD simulator. The nitride_RSO TDMOS has superior properties compared to those of the RSO TDMOS, in terms of drain current and on‐resistance, owing to a high nitride permittivity. Moreover, variations in the electrical properties of the nitride_RSO TDMOS are investigated using various devices, pitch sizes, and thicknesses of the insulator. Along with an increase of the device pitch size and the thickness of the insulator, the breakdown voltage slowly improves due to a vertical field plate effect; however, the drain current and on‐resistance degenerate, owing to a shrinking of the drift width. The nitride_RSO TDMOS is successfully fabricated, and the blocking voltage and specific on‐resistance are 108 V and 1.1 mΩcm2, respectively.

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First topography simulation of SiC-chemical-vapor-deposition trench filling, demonstrating the essential impact of the Gibbs-Thomson effect

Mochizuki

Kosugi

et al. 2017

2017 IEEE International Electron Devices Meeting (IEDM)

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Fabrication of high aspect ratio doping region by using trench filling of epitaxial Si growth

Cited by 10 publications

References 1 publication

Electrical properties of super junction p-n diodes fabricated by trench filling

Electrical properties of super junction p-n diodes fabricated by trench filling

Simulation and Fabrication Studies of Semi-superjunction Trench Power MOSFETs by RSO Process with Silicon Nitride Layer

First topography simulation of SiC-chemical-vapor-deposition trench filling, demonstrating the essential impact of the Gibbs-Thomson effect

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