Fabrication of Heterojunctions

Milnes, A. G.; Feucht, D. L.

doi:10.1016/b978-0-12-498050-1.50015-5

Cited by 14 publications

(15 citation statements)

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“…The density of interface states found this way is in good agreement with the values evaluated by Donnelly and Milnes in p-Ge/n-Si heterojunctions [I41 and by Mitchell [7] in CdTe/CdS heterojunctions; they are consistent with the density of dangling bonds of about 10'4 om-2 calculated from lattice mismatch considerations [15].…”

Section: Resultssupporting

confidence: 88%

Electrical properties of CdTe/CdS heterojunctions obtained by closed-tube chemical transport

Mancini

Quirini

Rizzo

et al. 1980

Phys. Stat. Sol. (a)

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and Laboratorio MAXPEC, C.N.R., P a r m ( b ) CdTe-CdS heterojunctions are prepared by growing epitaxial layers of CdTe on the basal plane of C d s single crystals. A closed-tube chemical transport technique is used, with hydrochloric acid as transporting agent. Current-voltage characteristics a t different temperatures, capacitancevoltage and capacitance-frequency curves are investigated for various Au-CdTe-CdS-In structures. The experimental results indicate that the electrical characteristics of these junctions are strongly dependent on the deposition face, (0001) or (OOOI), of the substrate; they can be explained by a recombination-tunneling mechanism via interface states.Des heterojunctions CdTe-CdS ont Bt6 rkalis6es, croissant des couches Bpitaxiques de CdTe sur la couche basale des monocristaux de CdS. On a utilize la technique du transport chimique dans le tube ferm6, employant I'acide hydrochlorique comme agent transporteur. Les caracteristiques cournat-voltage a temperatures diffbrentes, les courbes capacit&voltage e t capacitb-frkquence ont BtB Btudihes pour plusieurs structures Au-CdTe-CdS-In. Les resultats expkrimentals demontrent que les caractkristiques electriques de la jonction sont fortement dependants de la face (0001) ou (0001) de la souscouche; elle sont expliqubes on moyen de un mecanism de recombinasion-tunneling par des Btats de interface.

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Section: Resultssupporting

confidence: 88%

Electrical properties of CdTe/CdS heterojunctions obtained by closed-tube chemical transport

Mancini

Quirini

Rizzo

et al. 1980

Phys. Stat. Sol. (a)

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“…However, the photoresponse mechanism of the ZnO-NR/GaN-NT UV photodetector found to be similar with that of the GQD-sensitized detector except for more flow of electrons due to GQD involvement as shown in Figure b. Figure c,d demonstrates the energy band diagram of ZnO/GaN and GQD/ZnO/GaN heterojunctions by using the Anderson model. , When the heterojunction between ZnO-NR and GaN-NT is formed a charge depletion region is created at the heterointerface. Accordingly, the generated electrons drift into the ZnO and respective holes are accelerated toward GaN (shown in Figure c).…”

Section: Resultsmentioning

confidence: 81%

Graphene Quantum Dot-Sensitized ZnO-Nanorod/GaN-Nanotower Heterostructure-Based High-Performance UV Photodetectors

Goswami

Aggarwal

Verma

et al. 2020

ACS Appl. Mater. Interfaces

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The fabrication of a superior-performance ultraviolet (UV) photodetector utilizing graphene quantum dots (GQDs) as a sensitization agent on a ZnO-nanorod/GaN-nanotower heterostructure has been realized. GQD sensitization displays substantial impact on the electrical as well as the optical performance of a heterojunction UV photodetector. The GQD sensitization stimulates charge carriers in both ZnO and GaN and allows energy band alignment, which is realized by a spontaneous time-correlated transient response. The fabricated device demonstrates an excellent responsivity of 3.2 × 10 3 A/W at −6 V and displays an enhancement of ∼265% compared to its bare counterpart. In addition, the fabricated heterostructure UV photodetector exhibits a very high external quantum efficiency of 1.2 × 10 6 %, better switching speed, and signal detection capability as low as ∼50 fW.

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“…In semiconductor heterojunctions, this difference defines the important band offset parameter. 55,56 It is not clear at this moment the significance of this band offset value in the IGF at the crystalline Si 3 N 4 and glassy Si-O-N interface. Since Si 3 N 4 is also used in metal-oxide-semiconductor ͑MOS͒ devices as an insulator, it is possible that this information on the band offset for the IGF could play some role that has not been recognized so far.…”

Section: Discussionmentioning

confidence: 92%

Electronic structure and bonding of intergranular glassy films in polycrystallineSi3N4:Ab initiostudies and classical molecular dynamics simulations

et al. 2005

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The electronic structure and bonding of a realistic model of an intergranular glassy film ͑IGF͒ was studied with multiple computational methods. The model has a Si-O-N glassy region sandwiched between crystalline basal planes of ␤-Si 3 N 4 and contains a total of 798 atoms. It was constructed with periodic boundary conditions via classical molecular dynamics ͑MD͒ techniques using an accurate multibody atomic potential. The model was then further relaxed by the VASP ͑Vienna ab initio simulation package͒ program. It is shown that the VASP-relaxed structure reduces the total energy from the MD-relaxed structure by only 47.38 eV, validating the accuracy of the multiatom potential used. The calculated electronic structure shows the IGF model to be an insulator with a sizable gap of almost 3 eV. Quasidefectlike states can be identified near the band edges arising from the more strained Si-N and Si-O bonds at the interface. Calculation of the Mulliken effective charge and bond order values indicates that the bonds in the glassy region and at the interface can be enhanced and weakened by distortions in the bond length and bond angle. The states at the top of the valence band are derived mostly from the crystalline part of the Si-N bonding while the states at the bottom of the conduction band are dominated by the Si-O bonding in the glassy region. Calculation of the electrostatic potential across the interface shows an average band offset of about 1.5 eV between the crystalline ␤-Si 3 N 4 and the glassy Si-O-N region which could be related to the space charge model for IGF.

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Fabrication of Heterojunctions

Cited by 14 publications

References 0 publications

Electrical properties of CdTe/CdS heterojunctions obtained by closed-tube chemical transport

Electrical properties of CdTe/CdS heterojunctions obtained by closed-tube chemical transport

Graphene Quantum Dot-Sensitized ZnO-Nanorod/GaN-Nanotower Heterostructure-Based High-Performance UV Photodetectors

Electronic structure and bonding of intergranular glassy films in polycrystallineSi3N4:Ab initiostudies and classical molecular dynamics simulations

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