Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by oxygen ion implantation

Abstract

The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). O + ions of energy 200 keV were implanted to a fluence of 1.9 x 10 18 ions-cm-2 and the implanted wafer was subjected to Rapid Thermal Annealing to 650 0 C. The resulting wafer has a topcrystalline Ge layer of ~ 220 nm thickness and Buried Oxide layer (BOX) layer of good quality crystalline GeO2 with thickness around 0.75µm. The crystalline GeO2 layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy, cross-sectional HRTEM with SAED and EDS established that the top Ge layer was recrystallized during annealing with faceted crystallites. The top layer (resistivity ≈32 ohm.cm) has a small tensile strain of around +0.4% and has estimated dislocation density of 2.7x10 7 cm-2. The thickness, crystallinity and electrical characteristics of the top layer and thequality of the BOX layer of GeO2 are such that it can be utilized for device fabrication.

Influence of Barrier Layers on ZrCoCe Getter Film Performance

“…Microelectromechanical system (MEMS) devices have been used in aerospace [ 1 ], biomedical [ 2 ], automotive [ 3 ], communications [ 4 ], as well as other high-tech fields [ 5 , 6 ], many of which use Ge as a substrate [ 7 , 8 , 9 ]. Getter films have attracted significant attention for their sorption performance in maintaining and improving the vacuum degree in MEMS vacuum devices for extended periods [ 10 , 11 , 12 , 13 ].…”