Fabrication of GaN-based LEDs

Abstract

The authors propose a simple Ar plasma treatment method to selectively damage the area underneath p-pad electrode of GaN-based light-emitting diodes (LEDs). It was found that we could form a highly resistive area so that the injected carriers will be forced to spread out horizontally for the LED. Under 20 mA current injection, it was found that the output powers were 16.0, 17.9 and 17.3 mW while the forward voltages were 3.17, 3.19 and 3.20 V for conventional LED and LED with SiO2 layer, respectively. Moreover, the LED with Ar plasma treatment is superior to the other LEDs while operating at a higher injection current.

Effects of Reaction Temperature and Cadmium Source on the Optical, Morphological and Cytotoxic Properties of CdSe/ZnSe Quantum Dots

“…Chang et al. 2007 also reported the size of QDs determined the mobility of QDs inside thecell, which could cause cellular damage [27] . The temporal evolution of UV‐Vis absorption and photoluminescence spectra of the as‐synthesized CdTe/CdSe/ZnSe displayed redshift in the spectra which also confirms the increase in the particle size during the growth of the core and shell while the full width at half maximum of the PL spectraobserved to increase with growth temperature and reaction time could be attributed to the defocused particle size distribution and the lattice mismatch between the core/shell interfaces [28] …”

Phytochemical profile, in vitro anti‐inflammatory, and anti‐xanthine oxidase activity of durian fruit rind fractions (Durio zibethinus)

“…Numerous isolated plant terpenes compounds have exhibited the potential to reduce or treat inflammation, gout, cancer, and bacterial infection (Del Prado-Audelo et al, 2021;Huang et al, 2022;Kaur et al, 2022). Among them, santonin is a sesquiterpene compound while amyrone succinyl is a triterpenoid.…”